This paper describes a highly-integrated 122 GHz system-on-chip radar sensor in a SiGe
BiCMOS technology. The chip includes a radar transceiver and two on-chip antennas …

This work presents a novel terahertz sideband separating receiver (SSR) implemented in
silicon germanium 0.13 μm BiCMOS technology that covers a broad frequency range of 220 …

This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset in a 0.13
μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, a …

This paper presents a 61 GHz push-push VCO with an integrated divide-by-eight divider and
an output buffer in a 130 nm SiGe BiCMOS process. The VCO core features a differential …

This paper describes an efficient, fully differential mixer intended to be used in a 77-GHz
frequency-modulated continuous wave radar transceiver, which is realized in a Silicon …

We investigated the effect of device parameters on intermediate-frequency (IF) output power
in sub-harmonic mixing by an anti-parallel diode pair based on Fermi-level managed barrier …

In this brief, a novel reduced-size 180° hybrid is presented to implement a-band
subharmonic mixer (SHM) via a 0.15-GaAs pHEMT process. The isolations between-port …

A miniature 180° hybrid is proposed to demonstrate a 200-GHz subharmonic mixer (SHM)
using a 0.18-μm SiGe BiCMOS process. The reduced-size 180° hybrid is achieved by …

This article introduces the first BiCMOS SiGe technology-based packaged noise source (NS)
operating in the-band (140–220 GHz). An amplified pn junction diode has been packaged …

This paper presents a Ka-to F-band ultra-broadband subharmonic mixer (SHM) using the
standard 90-nm CMOS process. The proposed SHM employs a distributed amplifier and …