We demonstrate monolithic 3D integration of logic and memory in arbitrary vertical stacking
order with the ability to use conventional inter-layer vias to connect between any layers of …

3D die stacking and 2.5 D interposer design are promising technologies to improve
integration density, performance and cost. Current approaches face serious issues in …

As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …

Monolithic three-dimensional (3D) integration enables revolutionary digital system
architectures of computation immersed in memory. Vertically-stacked layers of logic circuits …

As physical transistor scaling nears its fundamental limits and many applications are
increasingly bottlenecked by memory bandwidth, three-dimensional (3D) integration is a …

The traditional von Neumann computing architecture based on metal-oxide field-effect-
transistors (MOSFETs) is more and more incompetent for the increasing demand for …

A method comprises providing a first substrate having dielectric structures and conductive
structures. Ions are implanted into the first substrate, the ions traveling through the dielectric …

For the first time, the electrothermal characteristics of a three-dimensional (3D) monolithic
complementary FET (CFET) in DC operation as well as in AC CMOS operation were …

In this study, the electrical characteristics and electrical coupling effect for monolithic 3-
dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM …

A single-crystal islands (SCI) technique using low thermal budget pulse laser process is
proposed and demonstrated to fabricate single-crystal silicon islands over amorphous …