Oxygen defect processes in silicon and silicon germanium

A Chroneos, EN Sgourou, CA Londos… - Applied Physics …, 2015 - pubs.aip.org
Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

[图书][B] Radiation effects in advanced semiconductor materials and devices

C Claeys, E Simoen - 2013 - books.google.com
In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

Diffusion and dopant activation in germanium: Insights from recent experimental and theoretical results

EN Sgourou, Y Panayiotatos, RV Vovk, N Kuganathan… - Applied Sciences, 2019 - mdpi.com
Germanium is an important mainstream material for many nanoelectronic and sensor
applications. The understanding of diffusion at an atomic level is important for fundamental …

Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance

T Akila, V Balasubramani, SK Ali, MA Manthrammel… - Optical Materials, 2024 - Elsevier
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …

Tin induced a-Si crystallization in thin films of Si-Sn alloys

V Neimash, V Poroshin, P Shepeliavyi… - Journal of Applied …, 2013 - pubs.aip.org
Effects of tin doping on crystallization of amorphous silicon were studied using Raman
scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence …

Vacancy-oxygen defects in silicon: the impact of isovalent doping

CA Londos, EN Sgourou, D Hall… - Journal of Materials …, 2014 - Springer
Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …

Toward defect engineering strategies to optimize energy and electronic materials

EN Sgourou, Y Panayiotatos, RV Vovk, A Chroneos - Applied Sciences, 2017 - mdpi.com
The technological requirement to optimize materials for energy and electronic materials has
led to the use of defect engineering strategies. These strategies take advantage of the …

Tin doping of silicon for controlling oxygen precipitation and radiation hardness

C Claeys, E Simoen, VB Neimash… - Journal of The …, 2001 - iopscience.iop.org
This paper reviews the impact of doping silicon with substitutional tin impurities on the
formation of intrinsic and extrinsic lattice defects. The two major topics covered are (i) the …

Investigation of the effect of different Bi2O3x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters

Y Badali, Y Azizian-Kalandaragh, İ Uslu… - Journal of Materials …, 2020 - Springer
In this work, Au/4H–SiC Schottky diodes with different Bi 2 O 3–x: PVA (x= Sm, Sn, Mo) thin
insulator interface layer were produced for the fabrication of metal/insulator/semiconductor …

Comparative study of oxygen-and carbon-related defects in electron irradiated cz–Si doped with isovalent impurities

CA Londos, A Chroneos, EN Sgourou, I Panagiotidis… - Applied Sciences, 2022 - mdpi.com
Crystalline silicon (Si) is the key material of the semiconductor industry, with significant
applications for electronic and microelectronic devices. The properties of Si are affected by …