Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
[HTML][HTML] Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films
In the last decade orthorhombic hafnia and zirconia films have attracted tremendous
attention arising from the discovery of ferroelectricity at the nanoscale. However, an initial …
attention arising from the discovery of ferroelectricity at the nanoscale. However, an initial …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …
there is tremendous interest in this material and ferroelectric oxides are once again in the …
Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors
G Segantini, B Manchon… - Advanced Electronic …, 2023 - Wiley Online Library
Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric
memristive devices, due to its compatibility with the complementary metal‐oxide …
memristive devices, due to its compatibility with the complementary metal‐oxide …
Improved polarization and endurance in ferroelectric Hf 0.5 Zr 0.5 O 2 films on SrTiO 3 (110)
The metastable orthorhombic phase of Hf0. 5Zr0. 5O2 (HZO) can be stabilized in thin films
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …
on La0. 67Sr0. 33MnO3 (LSMO) buffered (001)-oriented SrTiO3 (STO) by intriguing epitaxy …
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films
In this article, a phase-field polarization switching model for ferroelectric HfO 2-based thin
films considering oxygen vacancies () has been developed based on the 2-D time …
films considering oxygen vacancies () has been developed based on the 2-D time …
Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses
Y Cao, Y Liu, Y Yang, Q Li, T Zhang, L Ji… - Advanced Electronic …, 2023 - Wiley Online Library
Advanced synaptic devices capable of neuromorphic data processing are widely studied as
the building block in the next‐generation computing architecture for artificial intelligence …
the building block in the next‐generation computing architecture for artificial intelligence …
[HTML][HTML] Ferroelectric (hf, zr, la) o2 films
Abstract The impact of La, Zr and Hf content on the crystal phases and ferroelectric and
dielectric properties of (Hf, Zr, La) O 2 has been determined by investigating epitaxial films …
dielectric properties of (Hf, Zr, La) O 2 has been determined by investigating epitaxial films …
An overview of ferroelectric hafnia and epitaxial growth
Hafnia thin films have been under intensive research during the past few years due to its
robust ferroelectricity under very thin limit and good compatibility with silicon. The polar …
robust ferroelectricity under very thin limit and good compatibility with silicon. The polar …