The switching effects in amorphous GeSe 2, GeSe 4, GeSe 2 Tl and GeSe 4 Tl thin films
have been investigated. The observed switching phenimenon for these compositions was of …

Both dynamic and static I–V characteristic curves of amorphous thin films of Se 75 Ge 25− x
As x (5⩽×⩽ 20) for switching and memory behaviour have been studied. The films were …

The electrical properties of Ge5As38Te57 have been carried out as a function of
temperature at different dc electric fields for the bulk and thin films. This material shows a …

The current-voltage characteristic in the OFF-state and the switching phenomenon are
investigated in Ge 20 M 75 Bi 5 (M S, Se or Te) chalcogenide semiconductor thin films. The …

Electrical, thermal and optical properties of Se 75 Ge 7 Sb 18 in bulk and thin film form were
studied. X-ray diffraction patterns indicate that the bulk sample and the prepared films at …

Various factors as temperature, thickness and element addition effect on the electrical
conductivity and switching phenomenon in Se 85 Te 15 X 5 (x= In, Sn) films was examined …

Thin films of different thicknesses in the range of 200–720 nm have been deposited on glass
substrates at room temperature using thermal evaporation technique. The structural …

Thin films of Ge20In5Se75 were prepared by the conventional thermal evaporation
technique of presynthesize material on pyrographite and glass substrate. The chemical …

The switching behavior was investigated for Se 98 Te 2 and Se 96 Te 2 X 2 (X= Zn or Cd)
Chalcogenide glasses in thin film form. The thermal evaporation process was used for the …

Electrical conductivity measurements were performed on TlInSe 2 and TlInTe 2 single
crystals. The corresponding current-voltage (IU) characteristics consist of two parts: An …