Spinodal nanodecomposition in semiconductors doped with transition metals
This review presents the recent progress in computational materials design, experimental
realization, and control methods of spinodal nanodecomposition under three-and two …
realization, and control methods of spinodal nanodecomposition under three-and two …
Room temperature ferromagnetism in (Ga 1− x Mn x) 2 O 3 epitaxial thin films
Mn-doped monoclinic β-(Ga1− xMnx) 2O3 thin films were epitaxially grown on α-Al2O3
(0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular …
(0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular …
A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications
Experimental and theoretical studies on hydrogen in diluted magnetic semiconductors and
related materials have been reviewed. A strong modification of magnetic order has been …
related materials have been reviewed. A strong modification of magnetic order has been …
Partially filled intermediate band of Cr-doped GaN films
S Sonoda - Applied Physics Letters, 2012 - pubs.aip.org
We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical
absorption, photoelectron yield spectroscopy, and charge transport measurements. It was …
absorption, photoelectron yield spectroscopy, and charge transport measurements. It was …
Origin of room-temperature ferromagnetism in Co-doped CeO2
K Tarui, T Oomori, Y Ito, T Yamamoto - Physica B: Condensed Matter, 2021 - Elsevier
Co-doped CeO 2 fabricated using the conventional solid-state reaction method
demonstrates ferromagnetism at room temperature (RT). To investigate the origin of …
demonstrates ferromagnetism at room temperature (RT). To investigate the origin of …
X-ray magnetic circular dichroism characterization of GaN∕ Ga1− xMnxN digital ferromagnetic heterostructure
The authors have investigated the magnetic properties of a Ga N∕ Ga 1− x Mn x N (x= 0.1)
digital ferromagnetic heterostructure (DFH) showing ferromagnetic behavior using soft x-ray …
digital ferromagnetic heterostructure (DFH) showing ferromagnetic behavior using soft x-ray …
Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion
JI Hwang, Y Osafune, M Kobayashi, K Ebata… - Journal of applied …, 2007 - pubs.aip.org
We have performed an in situ depth profile study of Mn-doped GaN prepared by a low
temperature thermal diffusion method using photoemission and x-ray absorption …
temperature thermal diffusion method using photoemission and x-ray absorption …
X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC
O Sancho-Juan, A Cantarero, N Garro… - Journal of Physics …, 2009 - iopscience.iop.org
By means of x-ray absorption near-edge structure (XANES) several Ga 1− x Mn x N (0.03<
x< 0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different …
x< 0.09) layers have been analyzed. The Mn-doped GaN samples consisted of different …
Effects of growth temperature on the valence, optical and magnetic properties of Mn-doped GaN films grown by metal organic chemical vapor deposition
X Cui, J Zhang - Optical Materials, 2015 - Elsevier
Mn-doped GaN epitaxial films were grown at 900° C, 930° C, and 980° C on sapphire
substrates (0 0 0 1) by metal organic chemical vapor deposition. The valence of Mn ions in …
substrates (0 0 0 1) by metal organic chemical vapor deposition. The valence of Mn ions in …
金属有机物化学气相沉积法制备的锰掺杂氮化镓薄膜的结构和光学性质
崔旭高， 袁浩， 沙文健， 朱胜南 - 中国科技论文, 2016 - search.ebscohost.com
为研究锰价态对掺杂氮化镓薄膜的光学性质影响, 采用金属有机物化学气相沉积技术在不同的
温度下生长锰掺杂的氮化镓外延薄膜材料. 采用原子力显微镜探测不同温度下生长的样品表面; X …
温度下生长锰掺杂的氮化镓外延薄膜材料. 采用原子力显微镜探测不同温度下生长的样品表面; X …