Before forming a trench in a Silicon Substrate through a patterned Silicon nitride film Serving
as a mask, etching is executed until the main Surface of the Silicon SubStrate is exposed …

A method for modulating the stress caused by bird beak formation of small width devices by
a nitrogen plasma treatment. The nitrogen plasma process forms a nitride liner about the …

5,116,464 A 5/1992 Edell et al................... 438,753 6,407,329 B1 6/2002 Iino et al. 5,136,346
A 8, 1992 Kornowski 6,410,843 B1 6/2002 Kishi et al. 5,139,974 A 8, 1992 Sandhu et …

The invention provides a method for increasing the usable Surface area of a semiconductor
wafer having a Substantially planar Surface and a thickness dimension at right angles to …

The invention provides a process for texturing a surface of a semiconductor material, the
process comprising: applying a layer of a protective Substance on said Surface wherein said …

Integrated Circuit (IC) technology relies on the Successful performance of each of its
contributing components. Although the technology drivers are typically high perfor mance …

Provided is a trench filling method, which includes: forming a silicon oxide liner on a
semiconductor substrate with trenches formed therein, the trenches including narrow-width …

Methods of forming layers comprising epitaxial silicon, and methods of forming field effect
transistors are disclosed. A method of forming a layer comprising epitaxial silicon includes …

An adjustment pattern, which is composed of a reference pattern made of plural
independent liquid droplets and a pattern to be measured made of plural independent liquid …

An object of the present invention is to provide a display device which can be manufactured
with usability of a material improved and with a manufacturing step simplified and to provide …