Q Wu, Y Cao,
Q Luo, H Jiang, Z Han… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
Hf0. 5Zr0. 5O2 (HZO)-based ferroelectric random access memory (FeRAM) is a good
candidate for the embedded nonvolatile memory (eNVM) applications because of its high …