Nano-Raman scattering microscopy: resolution and enhancement

S Kawata, T Ichimura, A Taguchi… - Chemical reviews, 2017 - ACS Publications
Raman scattering microscopy is becoming one of the hot topics in analytical microscopy as
a tool for analyzing advanced nanomaterials, such as biomolecules in a live cell for the …

Upcycling end of life solar panels to lithium‐ion batteries via a low temperature approach

Y Boon Tay, Y Sim, J Ang Koon Keong… - …, 2022 - Wiley Online Library
The massive adoption of renewable energy especially photovoltaic (PVs) panels is expected
to create a huge waste stream once they reach end‐of‐life (EoL). Despite having the highest …

Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode

Y Saito, M Motohashi, N Hayazawa, M Iyoki… - Applied physics …, 2006 - pubs.aip.org
We observe localized strains in strained silicon by tip-enhanced near-field Raman
spectroscope in reflection mode. The tip-enhanced Raman spectra show that the Raman …

The structural modulation of amorphous 2D tungsten oxide materials in magnetron sputtering

B Zhang, V Cicmancova, B Ludvik… - Advanced Materials …, 2022 - Wiley Online Library
Abstract 2D oxide materials have gained tremendous attention in the applications. Herein, a
synthesis route of 2D WO3 materials via magnetron sputtering is reported. A deposition …

Micro-Raman study of growth parameter restraint for silicon nanowire synthesis using MACE

MK Sahoo, PG Kale - Superlattices and Microstructures, 2019 - Elsevier
The current work explains the fabrication of SiNWs through metal-assisted chemical etching
(MACE). The MACE produces SiNWs using an electrolyte composed of hydrofluoric acid …

Effects of iodine doping on electrical characteristics of solution-processed copper oxide thin-film transistors

H Lee, X Zhang, B Kim, JH Bae, J Park - materials, 2021 - mdpi.com
In order to implement oxide semiconductor-based complementary circuits, the improvement
of the electrical properties of p-type oxide semiconductors and the performance of p-type …

Liquid phase exfoliation of hafnium diselenide and its role in initiating the mode-locked pulse laser at eye-safe wavelength region

H Ahmad, NA Azali, N Yusoff - Optical Materials, 2022 - Elsevier
In this study, the exfoliation of bulk hafnium diselenide (HfSe 2) into a few layers of HfSe 2
was obtained via a simple liquid-phase exfoliation (LPE) technique in water with the …

Passively mode-locked laser using HfSe2 as saturable absorber at 1.5 μm and 2.0 μm

H Ahmad, NHA Kahar, N Yusoff, AIM Hanafi… - Optics & Laser …, 2022 - Elsevier
This research demonstrates mode-locked erbium-doped fiber laser (EDFL) and thulium-
holmium doped fiber laser (THDFL) using hafnium diselenide (HfSe 2) as saturable …

Compressively strained SiGe band-to-band tunneling model calibration based on pin diodes and prospect of strained SiGe tunneling field-effect transistors

KH Kao, AS Verhulst, R Rooyackers… - Journal of Applied …, 2014 - pubs.aip.org
Band-to-band tunneling parameters of strained indirect bandgap materials are not well-
known, hampering the reliability of performance predictions of tunneling devices based on …

Raman spectroscopy study of solution-processed In2O3 thin films: effect of annealing temperature on the characteristics of In2O3 semiconductors and thin-film …

H Lee, B Kim, CY Gao, HJ Choi, JH Ko… - … Crystals and Liquid …, 2019 - Taylor & Francis
We investigate the effect of annealing temperature on the characteristics of solution-
processed indium oxide (In2O3) films. From thermogravimetric analysis of the precursor …