Towards oxide electronics: a roadmap

M Coll, J Fontcuberta, M Althammer, M Bibes… - Applied surface …, 2019 - orbit.dtu.dk
At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Thin‐film ferroelectrics

A Fernandez, M Acharya, HG Lee, J Schimpf… - Advanced …, 2022 - Wiley Online Library
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Barium titanate nanostructures and thin films for photonics

A Karvounis, F Timpu… - Advanced Optical …, 2020 - Wiley Online Library
Barium titanate (BaTiO3) is a synthetic crystal used in electromechanical transducers and
multilayer ceramic capacitors. Since it is not available in nature, a variety of growth methods …

The 2016 oxide electronic materials and oxide interfaces roadmap

M Lorenz, MSR Rao, T Venkatesan… - Journal of Physics D …, 2016 - iopscience.iop.org
Oxide electronic materials provide a plethora of possible applications and offer ample
opportunity for scientists to probe into some of the exciting and intriguing phenomena …

Enabling ultra-low-voltage switching in BaTiO3

Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla… - Nature materials, 2022 - nature.com
Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film
performance is considerably worse, thus precluding their use in next-generation devices …

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

I Fina, F Sanchez - ACS Applied Electronic Materials, 2021 - ACS Publications
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …

High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films

J Lyu, T Song, I Fina, F Sánchez - Nanoscale, 2020 - pubs.rsc.org
Ferroelectric HfO2 is a promising material for new memory devices, but significant
improvement of its important properties is necessary for practical application. However …

Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

S Estandía, N Dix, MF Chisholm, I Fina… - Crystal Growth & …, 2020 - ACS Publications
Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the
material and for prototyping emerging devices. Ferroelectric Hf0. 5Zr0. 5O2 (111) films were …

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

L Mazet, SM Yang, SV Kalinin… - … and technology of …, 2015 - iopscience.iop.org
SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the
route to the monolithic integration of various complex oxides on the complementary metal …

Freestanding complex-oxide membranes

D Pesquera, A Fernández, E Khestanova… - Journal of Physics …, 2022 - iopscience.iop.org
Complex oxides show a vast range of functional responses, unparalleled within the
inorganic solids realm, making them promising materials for applications as varied as next …