The performance enhancement of integrated circuits relying on dimension scaling (ie,
following Moore's Law) is more and more challenging owing to the physical limit of Si …

The top-gate structure is currently adopted in various flat-panel displays because of its
diverse advantages such as passivation from the external environment and process …

A high Hall-effect mobility of 1,250 cm 2 V 1 s− 1 is achieved in ZrS 2 film as a two-
dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS 2 film was …

Sheet resistance (R sheet) reduction of a-few-layered molybdenum disulfide (MoS 2) film
using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) …

ZrS 2 amibipolar MISFETs are obtained in operations with both electrons and holes. A
layered polycrystalline ZrS 2 thin film was formed by sputtering and sulfur-vapor annealing …

We demonstrate chip-level integrated n-type metal–insulator–semiconductor field effect
transistors with a sputtered molybdenum disulfide (MoS 2) thin channel and titanium nitride …

The effect of different underlying insulators on molybdenum disulfide (MoS2) films deposited
using sputtering, which is a physical vapor deposition (PVD) method, was studied. The study …

This study demonstrates atomic layer deposition of an Al 2 O 3 film on a sputtered-MoS 2
film and capacitance–voltage (C–V) characteristics of TiN top-gated metal–insulator …

Spiking neural networks (SNNs) have attracted considerable attention as next-generation
neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity …

Advanced logic devices have already reached a 5-nm technology node, which features a
FinFET in Fig. 1 (a) and a new channel material of high mobility for p-type operation [1]. New …