In this paper, we present the impact of downscaling of nano-channel dimensions of Indium
Arsenide Fin Feld Effect Transistor (InAs-FinFET) on electrical characteristics of the …

The prime obstacle in continuing the transistor's scaling is to maintain ultra-shallow
source/drain (S/D) junctions with high doping concentration gradient, which definitely …

In this paper, a study of the existing SRAM (Static Random Access Memory) cell topologies
using various FET (Field Effect Transistor) low power devices has been done. Various low …

The junctionless MOSFET architectures appear to be attractive in realizing the Moore's law
prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double …

Grassland is an important component in the natural ecosystem. Geological detection and
numerical analysis of grassland landforms are the main ways to protect and develop …

Grassland is an important component in the natural ecosystem. Geological detection and
numerical analysis of grassland landforms are the main ways to protect and develop …

This work investigates the impact of electron mobility variations on short channel effects
(SCEs) in different semiconductor materials using FinFETs. Using PADRE simulator, the …

This work investigates the impact of temperature variation on Short Channel Effects (SCEs).
Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN) and Silicon (Si) …

L'effet de canal court (SCE) est l'un des effets néfastes qui apparaissent en raison de la
réduction de la taille des dispositifs SOI-MOSFETs ce qui ouvre la voie aux technologies …

The following work shows an innovative approach to model the timing of standard cells. By
using mathematical models instead of the classical SPICE-based characterization, a high …