Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
X Zhao, B Tang, L Gong, J Bai, J Ping… - Applied Physics Letters, 2021 - pubs.aip.org
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …
desirable for future high-resolution displays and lighting products. Here, we demonstrate …
[HTML][HTML] Recent Advances in Micro-LEDs Having Yellow–Green to Red Emission Wavelengths for Visible Light Communications
Visible light communication (VLC), which will primarily support high-speed internet
connectivity in the contemporary world, has progressively come to be recognized as a …
connectivity in the contemporary world, has progressively come to be recognized as a …
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
Improvement of light extraction efficiency of InGaN light emitting diodes (LEDs) using
polydimethylsiloxane (PDMS) concave microstructures arrays was demonstrated. The size …
polydimethylsiloxane (PDMS) concave microstructures arrays was demonstrated. The size …