Vanadium sesquioxide (V 2 O 3) is an archetypal Mott insulator in which the atomic positions
and electron correlations change as temperature, pressure, and doping are varied, giving …

The metal‐insulator phase transitions in V2O3 are considered archetypal manifestations of
Mott physics. Despite decades of research, the effects of doping, pressure, and anisotropic …

The phenomena of resistive switching (RS) or memristive devices is of great interest with the
rise of emerging technologies and applications. It provides a remarkable approach to control …

Phase transitions are key in determining and controlling the quantum properties of
correlated materials. Here, by using the combination of material synthesis and photoelectron …

We determine the electronic structure and phase stability of paramagnetic V 2 O 3 at the Mott-
Hubbard metal-insulator transition (MIT) by employing a combination of an ab initio method …

We present a study of the synthesis of epitaxial V 2 O 3 films on c-plane Al 2 O 3 substrates
by reactive dc-magnetron sputtering. The results reveal a temperature window, at …

We prepared V 2 O 3 thin films on C-or R-plane sapphire (Al 2 O 3) substrates by a pulsed
laser deposition method. X-ray diffraction analyses confirmed that single-phase V 2 O 3 films …

V 2 O 3 presents a complex interrelationship between the metal–insulator transition and the
structural rhombohedral-monoclinic one in temperature, as a function of sample thickness …

The insulator-to-metal transition in Mott insulators is the key mechanism for most of the
electronic devices belonging to the Mottronics family. Intense research efforts are currently …

We present a study of V 2 O 3 thin films grown on c-plane Al 2 O 3 substrates by reactive dc-
magnetron sputtering. Our results reveal three distinct types of films displaying different …