A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng… - Crystal Growth & …, 2020 - ACS Publications
Single β-phase (100)(Al x Ga1–x) 2O3 thin films were successfully grown on (100) oriented
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
[HTML][HTML] First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1− x) 2O3
Crack formation limits the growth of (Al x Ga 1− x) 2 O 3 epitaxial films on Ga 2 O 3
substrates. We employ first-principles calculations to determine the brittle fracture toughness …
substrates. We employ first-principles calculations to determine the brittle fracture toughness …
Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire
Ultrawide-bandgap semiconductors are ushering in the next generation of high-power
electronics. The correct crystal orientation can make or break successful epitaxy of such …
electronics. The correct crystal orientation can make or break successful epitaxy of such …
[HTML][HTML] Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates
Single α-phase (Al x Ga 1− x) 2 O 3 thin films are grown on m-plane sapphire (α-Al 2 O 3)
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …
substrates via metalorganic chemical vapor deposition. By systematically tuning the growth …
[HTML][HTML] Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
The development of novel ultra-wide bandgap (UWBG) materials requires precise
understanding of the atomic level structural origins that give rise to their important properties …
understanding of the atomic level structural origins that give rise to their important properties …
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
The valence and conduction band offsets at (100) β-(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …
Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition
K Kaneko, K Uno, R Jinno, S Fujita - Journal of Applied Physics, 2022 - pubs.aip.org
Routes to semi-stable phases of Ga2O3 are the subject of extended discussions based on
the review of growth methods, growth conditions, and precursors in works that report semi …
the review of growth methods, growth conditions, and precursors in works that report semi …
[HTML][HTML] Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire
Here, we have explored the thermal stability of α-(Al, Ga) 2 O 3 grown by the molecular-
beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various …
beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various …