High-quality n-type continuously graded Ge-rich Si 1− x Ge x parabolic quantum wells with
different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on …

n-type Ge/SiGe asymmetric coupled quantum wells represent the building block of a variety
of nanoscale quantum devices, including recently proposed designs for a silicon-based THz …

Electron-optical phonon interaction is the dominant energy-loss mechanism in low-
dimensional Ge/SiGe heterostructures and represents a key parameter for the design and …

Quantum phases of solid-state electron systems can sustain exotic phenomena and a very
rich spin physics. We utilize model-solid theory to show that Ge 1− x Sn x alloys, an …

We investigate the nanoheteroepitaxy (NHE) of SiGe and Ge quantum dots (QDs) grown on
nanotips (NTs) substrates realized in Si (001) wafers. Due to the lattice strain compliance …

The fabrication of complex low-dimensional quantum devices requires the control of the
heteroepitaxial growth at the subnanometer scale. This is particularly challenging when the …

We numerically investigate non-uniformly strained Si-based systems to demonstrate that
when a well focused laser beam locally excites the sample, the lattice distortion, impacting …

n-type doped Ge quantum wells with SiGe barriers represent a promising heterostructure
system for the development of radiation emitters in the terahertz range such as electrically …

The influence of the thermomechanical effects on the optical properties of germanium
microstructures is investigated. Finite element method (FEM) calculations allow a complete …

n-type Ge/SiGe quantum wells have been suggested as a promising platform for the
realization of a Si-compatible THz laser. Focusing on this material system, we have …