Wide bandgap devices in AC electric drives: Opportunities and challenges

AK Morya, MC Gardner, B Anvari, L Liu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

A review on high-frequency pulsed arc welding

Z Wang, D Jiang, J Wu, M Xu - Journal of Manufacturing Processes, 2020 - Elsevier
The modification of welding current waveform according to practical conditions and
requirements, is an important way to improve the welding quality of various metals …

Overview of silicon carbide technology: Device, converter, system, and application

FF Wang, Z Zhang - CPSS Transactions on Power Electronics …, 2016 - ieeexplore.ieee.org
This paper overviews the silicon carbide (SiC) technology. The focus is on the benefits of
SiC based power electronics for converters and systems, as well as their ability in enabling …

High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules

J Colmenares, D Peftitsis, J Rabkowski… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
This paper presents the design process of a 312-kVA three-phase silicon carbide inverter
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …

A novel analytical formulation of SiC-MOSFET losses to size high-efficiency three-phase inverters

P Costa, S Pinto, JF Silva - Energies, 2023 - mdpi.com
This paper presents a novel analytical loss formulation to predict the efficiency of three-
phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect …

Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction

J Rąbkowski, T Płatek - 2015 17th European Conference on …, 2015 - ieeexplore.ieee.org
The paper presents a study of the power losses in 1700V rated half-bridge power modules
applied in a 250kVA three-phase converter. Two types of the modules with comparable …

Comparative design of gate drivers with short-circuit protection scheme for SiC MOSFET and Si IGBT

S Yin, Y Wu, Y Liu, X Pan - Energies, 2019 - mdpi.com
Short-circuit faults are the most critical failure mechanism in power converters. Among the
various short-circuit protection schemes, desaturation protection is the most mature and …

Application of artificial intelligence in the new generation of underwater humanoid welding robots: a review

P Chi, Z Wang, H Liao, T Li, X Wu, Q Zhang - Artificial Intelligence Review, 2024 - Springer
Underwater welding robots play a crucial role in addressing challenges such as low
efficiency, suboptimal performance, and high risks associated with underwater welding …

[PDF][PDF] Silicon carbide power device characteristics, applications and challenges: an overview

MF Yaakub, MAM Radzi, FHM Noh… - International Journal of …, 2020 - academia.edu
Silicon (Si) based power devices have been employed in most high power applications
since decades ago. However, nowadays, most major applications demand higher efficiency …

[HTML][HTML] The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges

KF Rahman, S Falina, MFP Mohamed… - Applied Physics …, 2024 - pubs.aip.org
It is only recently that the electric vehicle (EV) has evolved into a contemporary invention.
There has been a rapid acceleration in the development of EVs in a number of nations in …