Characterization and modeling of threshold voltage for organic and amorphous thin-film transistors
This work portrays the study and analysis of several extraction techniques that are typically
used to ascertain the threshold voltage of organic thin-film transistors (OTFTs) and oxide …
used to ascertain the threshold voltage of organic thin-film transistors (OTFTs) and oxide …
Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure
P Nautiyal, P Pande, V Kundu, V Joshi… - Semiconductor …, 2024 - iopscience.iop.org
This article investigates the trapping mechanism in AlGaN/GaN heterostructure. For our
study, the traps within the AlGaN layer are introduced at the interface and near the interface …
study, the traps within the AlGaN layer are introduced at the interface and near the interface …
Using hetro-structure window in nano scale junctionless SOI MOSFET for high electrical performance
A new junctionless MOS transistor is proposed in this paper using hetro-structure
technology. A T-shape SiGe is applied under the source and channel region to extend the …
technology. A T-shape SiGe is applied under the source and channel region to extend the …
Impact of Wave Function Penetration into Gate Oxide on Gate Capacitance and Threshold Voltage of n-Channel Double Gate Junction Less Transistor
MMR Adnan, MS Rahman - 2018 International Conference on …, 2018 - ieeexplore.ieee.org
The effect of wave function penetration into gate oxide for n-Channel Double Gate
Junctionless Transistor had been studied in terms of quantum mechanically extracted gate …
Junctionless Transistor had been studied in terms of quantum mechanically extracted gate …
Impact of Increased Quantum Confinement on Gate Capacitance and Threshold Voltage of p Channel Junctionless Transistor
In this work, by employing self-consistent solver we study Capacitance-Voltage (CV)
characteristics and the threshold voltage variation of p-type Rectangular Gate Junctionless …
characteristics and the threshold voltage variation of p-type Rectangular Gate Junctionless …
Impact of structural geometry on quantum capacitance and threshold voltage of surrounding gate junction less nanowire field effect transistor
The Surrounding Gate (SG) Junction Less Nanowire Transistor (JLNT) structures are
gaining considerable attention in present times due to the availability of better control over …
gaining considerable attention in present times due to the availability of better control over …