[HTML][HTML] Investigations of the structural, morphological and electrical properties of multilayer ZnO/TiO2 thin films, deposited by sol–gel technique

MI Khan, KA Bhatti, R Qindeel, LG Bousiakou… - Results in physics, 2016 - Elsevier
Investigations of the structural, morphological and electrical properties of multilayer ZnO/TiO
2 thin films deposited by sol–gel technique on glass substrate. Sol–gel is a technique in …

Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

C Bairam, Y Yalçın, Hİ Efkere, E Çokduygulular… - Physica B: Condensed …, 2021 - Elsevier
In this study, the structural, morphological, optical, as well as electrical properties of the
titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was …

Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures

Y Şafak Asar, T Asar, Ş Altındal… - Philosophical …, 2015 - Taylor & Francis
In this study, we investigated temperature and voltage dependence of dielectric properties
and ac electrical conductivity (σ ac) of (AuZn)/TiO2/p-GaAs (110) metal–insulator …

On the transient photoconductivity behavior of sol–gel TiO2/ZnO composite thin films

T Georgakopoulos, N Todorova, K Pomoni… - Journal of Non …, 2015 - Elsevier
The transient photoconductivity of TiO 2/ZnO nanocomposite thin films was studied at 300 K,
both in vacuum and in air. The samples deposited on quartz substrates were prepared via …

Thickness-dependent physical properties of sputtered V2O5 films and Ti/V2O5/n-Si Schottky barrier diode

MD Kaya, BC Sertel, NA Sonmez, M Cakmak… - Applied Physics A, 2020 - Springer
Abstract Vanadium pentoxide (V 2 O 5) thin films were grown by radio frequency magnetron
sputtering on n-type silicon (n-Si) and glass substrates at 500° C. V 2 O 5 thin films were …

The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals

MD Kaya, BC Sertel, NA Sonmez, M Cakmak… - Journal of Materials …, 2021 - Springer
In this work, we reported the effect of different metal contacts on performance of metal–oxide–
semiconductor (MOS)-structured Schottky diodes formed with the vanadium pentoxide thin …

Effect of platinum doping on the structural and electrical properties of SnO2 thin films

T Asar, B Korkmaz, S Özçelik - Journal of Experimental …, 2016 - Taylor & Francis
The investigation of Pt doping effect on the structural and electrical properties of SnO2 thin
films was aimed in this study. For this purpose, the polycrystalline pure and Pt-doped SnO2 …

Frequency effect on electrical and dielectric performance of Au/n–GaAs structure with RF sputtering MoO3 interfacial layer

Ç Çetinkaya - Journal of Materials Science: Materials in Electronics, 2022 - Springer
The effect of frequency on the electrical and dielectric properties of the metal–semiconductor
structure with Molybdenum trioxide (MoO3) interfacial layer was investigated. MoO3 thin film …

Effect of TiO2-Surfactant Interface on the Electrical and Dielectric Properties of a Metal–Insulator–Semiconductor (MIS) Structure

Y Azizian-Kalandaragh, HI Efkere… - Journal of Electronic …, 2025 - Springer
To explore the effect of a TiO2-surfactant (Brij 58) insulator as an interfacial layer on the
electrical properties of a metal–semiconductor (MS) structure, a Au/TiO2-surfactant/n-Si …

Temperature dependent electron transport properties of degenerate SnO2 thin films

E Boyalı, V Baran, T Asar, S Özçelik, M Kasap - Journal of Alloys and …, 2017 - Elsevier
The degenerate SnO 2 thin films were deposited on n-type Si substrates by using the
magnetron sputtering system. The conductivity and Hall effect measurements of the films …