[PDF][PDF] 两种面向宇航应用的高可靠性抗辐射加固技术静态随机存储器单元
闫爱斌， 李坤， 黄正峰， 倪天明， 徐辉 - 电子与信息学报, 2024 - jeit.ac.cn
CMOS 尺寸的大幅缩小引发电路可靠性问题. 该文介绍了两种高可靠的基于设计的抗辐射加固(
RHBD) 10T 和12T 抗辐射加固技术(SRAM) 单元, 它们可以防护单节点翻转(SNU) …
RHBD) 10T 和12T 抗辐射加固技术(SRAM) 单元, 它们可以防护单节点翻转(SNU) …
Two Highly Reliable Radiation Hardened By Design Static Random Access Memory Cells for Aerospace Applications
A YAN, K LI, Z HUANG, T NI, H XU - 电子与信息学报, 2024 - jeit.ac.cn
Aggressive scaling of CMOS technologies can cause the reliability issues of circuits. Two
highly reliable Radiation Hardened By Design (RHBD) 10T and 12T Static Random-Access …
highly reliable Radiation Hardened By Design (RHBD) 10T and 12T Static Random-Access …