Low-loss heterogeneous integrations with high output power radar applications at W-band
X Yang, YS Huang, L Zhou, Z Zhao… - IEEE Journal of Solid …, 2021 - ieeexplore.ieee.org
This study presents a design of a 94-GHz high-performance and highly compact frequency-
modulated continuous-wave radar sensor. In this sensor, an-band CMOS-based all-digital …
modulated continuous-wave radar sensor. In this sensor, an-band CMOS-based all-digital …
MMICs in the millimeter-wave regime
Millimeter-wave monolithic microwave integrated circuits (MMICs) have been used in
military and astronomy systems for many years, and, in the last ten years, commercial …
military and astronomy systems for many years, and, in the last ten years, commercial …
Beyond-CMOS Nanodevices 1
F Balestra - 2014 - books.google.com
This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS
nanodevices for developing novel functionalities, logic and memories dedicated to …
nanodevices for developing novel functionalities, logic and memories dedicated to …
A narrowband multi-channel 2.4 GHz MEMS-based transceiver
D Ruffieux, JÉÉ Chabloz, M Contaldo… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
This paper presents a new radio architecture targeting RF transceivers for WSN, WBAN, and
biomedical applications. The high miniaturization required by such applications is achieved …
biomedical applications. The high miniaturization required by such applications is achieved …
High- Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits
A helium-3 ion bombardment technique is proposed to realize highQ inductors by creating
locally semi-insulating substrate areas. A dose of 1.0× 10 13 cm-2 helium-3 increases a Si …
locally semi-insulating substrate areas. A dose of 1.0× 10 13 cm-2 helium-3 increases a Si …
High frequency characterization of thin-film redistribution layers for embedded wafer level BGA
M Wojnowski, M Engl, M Brunnbauer… - 2007 9th Electronics …, 2007 - ieeexplore.ieee.org
We present high frequency characterization of thin-film redistribution layers for an
embedded wafer level BGA package technology. This technology is based on a" molded …
embedded wafer level BGA package technology. This technology is based on a" molded …
Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of …
P Sarafis, AG Nassiopoulou - Applied Physics Reviews, 2017 - pubs.aip.org
The increasing need for miniaturization, reliability, and cost efficiency in modern
telecommunications has boosted the idea of system-on-chip integration, incorporating the …
telecommunications has boosted the idea of system-on-chip integration, incorporating the …
On-chip high-performance millimeter-wave transmission lines on locally grown porous silicon areas
High-performance on-chip coplanar-waveguide (CPW) transmission lines (TLs) were
fabricated on locally formed porous silicon membranes on the Si wafer, and their millimeter …
fabricated on locally formed porous silicon membranes on the Si wafer, and their millimeter …
Perspective of RF design in future planar and FinFET CMOS
Scaling of CMOS transistors beyond 45 nm requires architectural redesign of the devices.
FinFETs are proposed to recover the reduced channel control. This work evaluates the …
FinFETs are proposed to recover the reduced channel control. This work evaluates the …
Thin-film as enabling passive integration technology for RF SoC and SiP
G Carchon, X Sun, G Posada, D Linten… - ISSCC. 2005 IEEE …, 2005 - ieeexplore.ieee.org
Thin-film Cu/BCB technology with integrated inductors, resistors and capacitors is described
for the realization of high-quality on-chip and in-package Si-based passive elements. Thin …
for the realization of high-quality on-chip and in-package Si-based passive elements. Thin …