Dithiocarbamate complexes as single source precursors to nanoscale binary, ternary and quaternary metal sulfides

JC Sarker, G Hogarth - Chemical Reviews, 2021 - ACS Publications
Nanodimensional metal sulfides are a developing class of low-cost materials with potential
applications in areas as wide-ranging as energy storage, electrocatalysis, and imaging. An …

Solution based CVD of main group materials

CE Knapp, CJ Carmalt - Chemical Society Reviews, 2016 - pubs.rsc.org
This critical review focuses on the solution based chemical vapour deposition (CVD) of main
group materials with particular emphasis on their current and potential applications …

Synthesis of Lateral Size-Controlled Monolayer 1H-MoS2@Oleylamine as Supercapacitor Electrodes.

N Savjani, EA Lewis, MA Bissett, JR Brent… - Chemistry of …, 2016 - ACS Publications
A new wet chemistry approach, based on the hot-injection–thermolytic decomposition of the
single-source precursor [Mo2O2S2 (S2COEt) 2] in oleylamine, is described for the …

Direct Growth of MoS2 and WS2 Layers by Metal Organic Chemical Vapor Deposition

S Cwik, D Mitoraj, O Mendoza Reyes… - Advanced Materials …, 2018 - Wiley Online Library
For the growth of 2D transition metal dichalcogenides, such as molybdenum (MoS2) and
tungsten disulfides (WS2), metalorganic chemical vapor deposition (MOCVD) routes are …

Aerosol-Assisted Chemical Vapor Deposition of MoS2 with a Thiourea Sulfur Source: Single-Source Precursors vs Coreactant Mixtures

IM Germaine, MB Huttel, MP Alderman… - … Applied Materials & …, 2023 - ACS Publications
Aerosol-assisted chemical vapor deposition of MoS2 from solutions containing the single-
source precursors cis-Mo (CO) 4 (TMTU) 2 and Mo (CO) 5 (TMTU) in toluene was compared …

A facile method for the production of SnS thin films from melt reactions

M Al-Shakban, Z Xie, N Savjani, MA Malik… - Journal of Materials …, 2016 - Springer
Abstract Tin (II) O-ethylxanthate [Sn (S 2 COEt) 2] was prepared and used as a single-source
precursor for the deposition of SnS thin films by a melt method. Polycrystalline,(111) …

Effect of WO3 precursor and sulfurization process on WS2 crystals growth by atmospheric pressure CVD

A Thangaraja, SM Shinde, G Kalita, M Tanemura - Materials Letters, 2015 - Elsevier
Atomically thin dichalcogenide layered materials have attracted significant interest owing to
their direct-gap property for nanoelectronics and optoelectronics applications. In this …

Single-Source Precursor for Tungsten Dichalcogenide Thin Films: Mo1–xWxS2 (0 ≤ x ≤ 1) Alloys by Aerosol-Assisted Chemical Vapor Deposition

AA Tedstone, EA Lewis, N Savjani, XL Zhong… - Chemistry of …, 2017 - ACS Publications
Metal chalcogenides are useful semiconductor materials for a range of applications. 1 The
transition metal dichalcogenides (TMDCs) molybdenum disulfide (MoS2) and tungsten …

The synthesis and characterization of Cu2ZnSnS4 thin films from melt reactions using xanthate precursors

M Al-Shakban, PD Matthews, N Savjani… - Journal of materials …, 2017 - Springer
Abstract Kesterite, Cu 2 ZnSnS 4 (CZTS), is a promising absorber layer for use in
photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to …

High-Performance Nanostructured MoS2 Electrodes with Spontaneous Ultralow Gold Loading for Hydrogen Evolution

EPC Higgins, AA Papaderakis, C Byrne… - The Journal of …, 2021 - ACS Publications
The scarcity and cost of noble metals used in commercial electrolyzers limit the sustainability
and scalability of water electrolysis for green hydrogen production. Herein, we report the …