[HTML][HTML] Towards zero-energy: Navigating the future with 6G in Cellular Internet of Things

MT Abbas, KJ Grinnemo, G Ferré, P Laurent… - Journal of Network and …, 2024 - Elsevier
Abstract The Cellular Internet of Things (CIoT) has seen significant growth in recent years.
With the deployment of 5G, it has become essential to reduce the power consumption of …

Monolithic integration of high-voltage thin-film electronics on low-voltage integrated circuits using a solution process

Y Son, B Frost, Y Zhao, RL Peterson - Nature Electronics, 2019 - nature.com
The performance of silicon complementary metal–oxide–semiconductor integrated circuits
can be enhanced through the monolithic three-dimensional integration of additional device …

On-chip memory technology design space explorations for mobile deep neural network accelerators

H Li, M Bhargava, PN Whatmough… - Proceedings of the 56th …, 2019 - dl.acm.org
Deep neural network (DNN) inference tasks have become ubiquitous workloads on mobile
SoCs and demand energy-efficient hardware accelerators. Mobile DNN accelerators are …

Resistive RAM-centric computing: Design and modeling methodology

H Li, TF Wu, S Mitra, HSP Wong - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Memory-centric computing with on-chip nonvolatile memories provides unique opportunities
for native and local information processing in an energy-efficient manner. Design and …

Nvmexplorer: A framework for cross-stack comparisons of embedded non-volatile memories

L Pentecost, A Hankin, M Donato, M Hempstead… - arXiv preprint arXiv …, 2021 - arxiv.org
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

AM Ionescu - 2017 IEEE International Electron Devices …, 2017 - ieeexplore.ieee.org
In this paper we will present and discuss some of the great research challenges and
opportunities related to 21 st century energy efficient computing and sensing devices and …

TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices

FK Hsueh, HY Chiu, CH Shen, JM Shieh… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
This paper presents the first monolithic 3D vertical cross-tier computing-in-memory (CIM)
SRAM cell fabricated using low cost TSV-free FinFET-based 3D+-IC technology. The 9T 3D …

Monolithic 3D SRAM-CIM macro fabricated with BEOL gate-all-around MOSFETs

FK Hsueh, CY Lee, CX Xue, CH Shen… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
For the first time, below 400° C-fabricated gate-all-around (GAA) transistor fabrication
process was demonstrated with monolithic computing-in-memory (CIM) circuit. Key enablers …

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

Y Xie, Z Zhang, D Zhong, L Peng - Nano Research, 2019 - Springer
Semiconducting carbon nanotube (CNT) field effect transistor (FET) is attractive for
constructing three-dimensional (3D) integrated circuits (ICs) because of its low-temperature …

Contact selectivity engineering in a 2 μm thick ultrathin c-Si solar cell using transition-metal oxides achieving an efficiency of 10.8%

M Xue, R Islam, AC Meng, Z Lyu, CY Lu… - … applied materials & …, 2017 - ACS Publications
In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin
crystalline silicon (c-Si) solar cells is demonstrated which results in an∼ 13% relative …