Power double-diffusion metal-oxide-semiconductor (DMOS) transistors are often subject to
significant self-heating and, thus, high device temperatures. This limits their safe operating …

This paper introduces an advanced methodology for fast 3-D Technology Computer Aided
Design (TCAD) electrothermal simulation for the analysis of power devices. The proposed …

Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based
on the relaxation method is designed. The results are compared with device finite element …

The thermal response in 3D-IC is important for its impact on chip sign-off for thermal sensor
placement, Tmax control, and thermal-aware electro-migration (EM). Thermal responses in …

Thermal issues pose significant challenges for today's RF power amplifier designs.
Recently, layout-based electro-thermal simulation tools have become widely available …

Operating temperature and temperature gradients are of critical concern in the design of
planar integrated circuits (ICs) and are bound to be exacerbated in the upcoming 3D …

This paper presents a new transient electro-thermal simulation method for fast 3-D chip-level
analysis of power electronics with field solver accuracy. The metallization stack and …

3D die stacking is a promising technique to allow miniaturization and performance
enhancement of electronic systems. Key technologies for realizing 3D interconnect schemes …

This paper presents a new transient electro-thermal (ET) simulation method for fast 3D chip-
level analysis of power electronics with field solver accuracy. The metallization stacks are …

3D stacking of dies is a promising technique to allow miniaturization and performance
enhancement of electronic systems. Key technologies for realizing 3D interconnect schemes …