In this study, the production and electrical characterization of Schottky circuit elements of
Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality …

The influence of annealing on structural, electronic features and the current transport
process of the Au/CoPc/undoped-InP (MPS)-type structure is explored. Raman …

Silicon nanowires are part of nanostructures, characterized by a high surface to volume ratio
or large aspect ratio (AR), between 10 and 104. The new physicochemical properties of …

Heterogeneous integration of emerging two-dimensional (2D) materials with mature three-
dimensional (3D) silicon-based semiconductor technology presents a promising approach …

We investigated the electron transport properties of cobalt sulphide Schottky diodes with Au
and Ag metal contacts. Pure CoS 2 nanoplates were synthesized using solid state reaction …

Temperature-dependent electrical analysis of the Ti/p-Si/Al Schottky barrier diode was
performed by measuring the current–voltage (I–V) and capacitance–voltage (C–V) …

CdTe powder samples have been synthesized using a hydrothermal approach, employing
cadmium acetate and tellurium dioxides as sources of Cd and Te, respectively. NaBH4 was …

An elaborate characterization of Si Schottky diodes, fabricated with Ti and Mo contacts, is
presented. Thermal treatment in forming gas is performed in order to improve the electrical …

Abstract Poly [2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylene vinylene](MEH-PPV) thin
layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs …

The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. The
review audits the fabrication and characterization of the TF metal-semiconductor (MS) diode …