Hard x-ray photoelectron spectroscopy: a snapshot of the state-of-the-art in 2020

C Kalha, NK Fernando, P Bhatt… - Journal of Physics …, 2021 - iopscience.iop.org
Hard x-ray photoelectron spectroscopy (HAXPES) is establishing itself as an essential
technique for the characterisation of materials. The number of specialised photoelectron …

Progress in BiFeO 3-based heterostructures: materials, properties and applications

L Yin, W Mi - Nanoscale, 2020 - pubs.rsc.org
BiFeO3-based heterostructures have attracted much attention for potential applications due
to their room-temperature multiferroic properties, proper band gaps and ultrahigh …

Learning through ferroelectric domain dynamics in solid-state synapses

S Boyn, J Grollier, G Lecerf, B Xu, N Locatelli… - Nature …, 2017 - nature.com
In the brain, learning is achieved through the ability of synapses to reconfigure the strength
by which they connect neurons (synaptic plasticity). In promising solid-state synapses called …

Giant topological Hall effect in correlated oxide thin films

L Vistoli, W Wang, A Sander, Q Zhu, B Casals… - Nature Physics, 2019 - nature.com
Strong electronic correlations can produce remarkable phenomena such as metal–insulator
transitions and greatly enhance superconductivity, thermoelectricity or optical nonlinearity. In …

Defects in ferroelectric HfO 2

A Chouprik, D Negrov, EY Tsymbal, A Zenkevich - Nanoscale, 2021 - pubs.rsc.org
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Y Hao, X Chen, L Zhang, MG Han, W Wang… - Nature …, 2023 - nature.com
The superior size and power scaling potential of ferroelectric-gated Mott transistors makes
them promising building blocks for developing energy-efficient memory and logic …

[图书][B] Hard X-ray photoelectron spectroscopy (HAXPES)

JC Woicik, J Woicik - 2016 - Springer
Photoelectron spectroscopy has its roots in the Nobel Prize-winning work of Albert Einstein
and Kai Siegbahn. It is therefore both an honor and a humbling experience to produce a …

Epitaxial ferroelectric interfacial devices

CAF Vaz, YJ Shin, M Bibes, KM Rabe… - Applied Physics …, 2021 - pubs.aip.org
Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

[HTML][HTML] Layer and spontaneous polarizations in perovskite oxides and their interplay in multiferroic bismuth ferrite

NA Spaldin, I Efe, MD Rossell… - The Journal of Chemical …, 2021 - pubs.aip.org
We review the concept of surface charge, first, in the context of the polarization in
ferroelectric materials and, second, in the context of layers of charged ions in ionic …

Millionfold resistance change in ferroelectric tunnel junctions based on nickelate electrodes

FY Bruno, S Boyn, S Fusil, S Girod… - Advanced Electronic …, 2016 - Wiley Online Library
When electrons tunnel through an ultrathin ferroelectric, large variations of the tunnel
transmission can result from the switching of the ferroelectric polarization. High‐quality …