Interfacial Challenges, processing strategies, and composite applications for high voltage all-solid-state lithium batteries based on halide and sulfide solid-state …

F Liu, L Gao, Z Zhang, L Zhang, N Deng, Y Zhao… - Energy Storage …, 2024 - Elsevier
Conventional lithium− ion batteries use flammable liquid electrolytes may increase the risk
of spontaneous combustion and explosion. The emergence of all− solid− state lithium …

Advanced sulfide solid electrolyte by core-shell structural design

F Wu, W Fitzhugh, L Ye, J Ning, X Li - Nature communications, 2018 - nature.com
Solid electrolyte is critical to next-generation solid-state lithium-ion batteries with high
energy density and improved safety. Sulfide solid electrolytes show some unique properties …

Morphology of ion-sputtered surfaces

MA Makeev, R Cuerno, AL Barabasi - … in Physics Research Section B: Beam …, 2002 - Elsevier
We derive a stochastic nonlinear continuum equation to describe the morphological
evolution of amorphous surfaces eroded by ion bombardment. Starting from Sigmund's …

Homogeneous flow of metallic glasses: A free volume perspective

F Spaepen - Scripta materialia, 2006 - Elsevier
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Roughening instability and ion‐induced viscous relaxation of SiO2 surfaces

TM Mayer, E Chason, AJ Howard - Journal of applied physics, 1994 - pubs.aip.org
We characterize the development of nanometer scale topography (roughness) on SiO2
surfaces as a result of low energy, off‐normal ion bombardment, using in situ energy …

Creation and annihilation of free volume during homogeneous flow of a metallic glass

M Heggen, F Spaepen, M Feuerbacher - Journal of Applied Physics, 2005 - pubs.aip.org
Bulk samples of Pd 41 Ni 10 Cu 29 P 20 glass were tested at constant true stress (20–636
MPa) in compression at 550, 555, and 565 K to study the transition from steady-state creep …

Thermal expansion and Grüneisen parameters of amorphous silicon: A realistic model calculation

J Fabian, PB Allen - Physical review letters, 1997 - APS
Using a realistic model, the mode Grüneisen parameters γ and the temperature dependent
coefficient of linear thermal expansion α (T) are calculated for amorphous silicon. The …

Coefficient of thermal expansion and elastic modulus of thin films

MM de Lima Jr, RG Lacerda, J Vilcarromero… - Journal of Applied …, 1999 - pubs.aip.org
The coefficient of thermal expansion (CTE), biaxial modulus, and stress of some amorphous
semiconductors (a-Si: H, aC: H, a-Ge: H, and a-GeC x: H) and metallic (Ag and Al) thin films …

Liquidlike atomic environments act as plasticity carriers in amorphous silicon

MJ Demkowicz, AS Argon - Physical Review B—Condensed Matter and …, 2005 - APS
Molecular-dynamics simulation of amorphous silicon (a-Si) using the Stillinger-Weber
potential reveals the existence of two distinct atomic environments: one solidlike and the …

MeV ion irradiation‐induced creation and relaxation of mechanical stress in silica

E Snoeks, T Weber, A Cacciato, A Polman - Journal of applied physics, 1995 - pubs.aip.org
In situ wafer curvature measurements were performed to study mechanical stress in
amorphous SiO2 during Xe, Ne, and Er ion irradiation at energies in the 0.27–4.0 MeV …