Barrier engineering for HgCdTe unipolar detectors on alternative substrates

F Uzgur, S Kocaman - Infrared Physics & Technology, 2019 - Elsevier
Delta-doped layers together with compositionally grading have been utilized to get nBn
configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave …

Black Arsenic Phosphorus Mid‐Wave Infrared Barrier Detector with High Detectivity at Room Temperature

S Zhang, X Huang, Y Chen, R Yin, H Wang… - Advanced …, 2024 - Wiley Online Library
The barrier structure is designed to enhance the operating temperature of the infrared
detector, thereby improving the efficiency of collecting photogenerated carriers and reducing …

Delta doping in HgCdTe-based unipolar barrier photodetectors

ND Akhavan, GA Umana-Membreno… - … on Electron Devices, 2018 - ieeexplore.ieee.org
A method is described whereby the valence band (VB) discontinuitythat is present in
mercury cadmium telluride (HgCdTe)-based alloy-barrier nBn detectors can be minimized. It …

All InGaAs unipolar barrier infrared detectors

F Uzgur, U Karaca, E Kizilkan… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Unipolar barrier detector design is a challenge for InGaAs material system since there is a
lack of proper barrier material that blocks majority carriers and allows unimpeded flow of …

Laser annealing to improve PbSe thin film photosensitivity and specific detectivity

MH Jang, MT Kramer, SS Yoo, MC Gupta - Applied Optics, 2020 - opg.optica.org
PbSe thin films were deposited on SiO_2/Si wafers using chemical bath deposition for mid-
wave infrared (MWIR) detection. To enhance the photosensitivity of PbSe thin films …

SWIR nightglow radiation detection around room temperature with depletion-engineered HgCdTe on alternative substrates

C Livanelioglu, Y Ozer, S Kocaman - Journal of the Optical Society of …, 2019 - opg.optica.org
Night vision applications utilize the reflected nightglow radiation in the short-wavelength
infrared (SWIR) atmospheric window. Nevertheless, the low light intensity values require …

Simulation of the influence of absorber thickness and doping concentration on non-equilibrium photovoltaic long-wavelength HgCdTe infrared detectors

J Yu, J Kong, W Qi, G Qin, Q Qin, J Li, J Yang… - Journal of Electronic …, 2023 - Springer
High operating temperature (HOT) detectors, especially state-of-the-art HgCdTe detectors,
hold promise for significantly reducing the weight and cost of infrared (IR) detectors …

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

K Jóźwikowski, A Jóźwikowska - Journal of Electronic materials, 2019 - Springer
Using our computer programs, numerical simulations of photoelectric and fluctuating
phenomena were carried out in diode structures of the CdHgTe mesa in the P+ ν (π) N+ …

Low dark current designs for mesa type SWIR photodetectors

A Şahin, S Kocaman - Infrared Technology and Applications …, 2020 - spiedigitallibrary.org
Extremely low level dark current values are required for SWIR detection during the night
when there is no active illumination due to weak sources and the lack of self emission …

Two dimensional silicon photonic crystal band gap applications for optical bio-sensing and modulation

SC Kılıç - 2021 - open.metu.edu.tr
In this thesis, we presented mainly two applications that utilize two dimensional Silicon
photonic crystals. One application is an optical refractive index based gas/bio-sensor. The …