Chemical mechanical polishing of GaN
S Hayashi, T Koga, MS Goorsky - Journal of The Electrochemical …, 2007 - iopscience.iop.org
Chemical mechanical polishing of (0001) GaN has been demonstrated with sodium-
hypochlorite-based solutions. Slurries including alumina abrasive provide an efficient …
hypochlorite-based solutions. Slurries including alumina abrasive provide an efficient …
The study of native oxide on chemically etched GaAs (100) surfaces
HJ Yoon, MH Choi, IS Park - Journal of The Electrochemical …, 1992 - iopscience.iop.org
The properties of native oxides on different chemically etched GaAs (100) surfaces were
investigated by Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy …
investigated by Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy …
Chemical mechanical polishing of exfoliated III-V layers
The chemical mechanical polishing of III-V materials including GaAs, InP, InAs, and GaSb is
investigated with sodium hypochlorite and citric acid solutions. It is found that the surfaces …
investigated with sodium hypochlorite and citric acid solutions. It is found that the surfaces …
GaAs oxidation with Townsend-discharge three-electrode microreactor
YA Astrov, AN Lodygin, LM Portsel… - Journal of Applied …, 2018 - pubs.aip.org
We have investigated the plasma-chemical anodic oxidation of single-crystal GaAs under
the action of products of the non-self-sustained dc Townsend discharge in a 98% Ar+ 2% O …
the action of products of the non-self-sustained dc Townsend discharge in a 98% Ar+ 2% O …
Effect of SiO2 Powder on Mirror Polishing of InP Wafers
Y Morisawa, I Kikuma, N Takayama… - Journal of electronic …, 1997 - Springer
This paper describes a mechanical-chemical polishing technique of InP wafers using
NaOCl, citric acid, and SiO 2 powder solutions. The polishing rate rapidly increases by …
NaOCl, citric acid, and SiO 2 powder solutions. The polishing rate rapidly increases by …
Halogen etching of group 13–15 (3–5) semiconductors and its relevance to chemical–mechanical polishing. The reactions of dibromine, dichlorine and sodium …
L Mcghee, I Nicol, RD Peacock, MI Robertson… - Journal of Materials …, 1997 - pubs.rsc.org
Room-temperature etching of gallium arsenide, gallium antimonide, indium phosphide,
indium arsenide and indium antimonide by dibromine or dichlorine has been studied under …
indium arsenide and indium antimonide by dibromine or dichlorine has been studied under …
Investigation of chemical mechanical polishing of GaAs wafer by the effect of a photocatalyst
SH Hong, H Isii, M Touge, J Watanabe - Key Engineering Materials, 2005 - Trans Tech Publ
The GaAs wafer is widely applied to semiconductor element related to telecommunication
and semiconductor laser. In this research, novel fine polishing technology of GaAs wafer …
and semiconductor laser. In this research, novel fine polishing technology of GaAs wafer …
氮化鎵基板經化學機械研磨後損害層觀察與去除之研究
陳奎佑， 李威儀 - 2010 - ir.lib.nycu.edu.tw
本論文主要目的是氮化鎵基板表面粗糙度與表面下損害層之研究, 期望能夠取得可供再成長之氮
化鎵基板. 機械研磨製程利用AFM 表面粗糙度探討取得理想參數, 使得表面粗糙度能夠小於1nm …
化鎵基板. 機械研磨製程利用AFM 表面粗糙度探討取得理想參數, 使得表面粗糙度能夠小於1nm …
Improved surface treatments for recycled (100) GaAs substrates in view of molecular-beam epitaxy growth: Auger electron spectroscopy, Raman, and secondary ion …
F Négri, E Bedel-Pereira - Journal of Vacuum Science & Technology B …, 2002 - pubs.aip.org
The effects of chemical treatments on recycled (100) GaAs surfaces processed in
microelectronic industry have been studied. The recycling process consists in establishing …
microelectronic industry have been studied. The recycling process consists in establishing …
Effect of sodium on Ga and As chemical states in the surface layer of GaAs polished with NaOCl
IA Sokolov, VV Kozlov, AK Tkalich - Semiconductor science and …, 1993 - iopscience.iop.org
We performed an XPS investigation of a (100) GaAs surface chemically polished with NaOCl
aqueous solutions (C NaOCl= 60 gl-1) containing NaOH. At C NaOH> 2 gl-1 the sodium …
aqueous solutions (C NaOCl= 60 gl-1) containing NaOH. At C NaOH> 2 gl-1 the sodium …