Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

The photoconductivity in monolayer MoS 2 back-gate transistors is studied as a function of
temperature and pressure. The photocurrent increases linearly with the light intensity up to a …

The unprecedented demand for sophisticated, self-powered, compact, ultrafast, cost-
effective, and broadband light sensors for a myriad of applications has spurred a lot of …

Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor
deposition onto SiO2/Si substrates, are exploited to fabricate field‐effect transistors with n …

A promising strategy toward ultrathin, sensitive photodetectors is the combination of a
photoactive semiconducting transition-metal dichalcogenide (TMDC) monolayer like MoS2 …

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum
disulfide (MoS2), hold great promise for next-generation nanoelectronic and nanophotonic …

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are increasingly
investigated for applications such as optoelectronic memories, artificial neurons, sensors …

The combination of a high absorption LaVO 3 in the visible region and two-dimensional
semiconductor material is an ideal structure for high-performance broadband photodetector …

Graphene and its nanohybrid photodetectors (PDs) offer unique interfacial and synergistic
properties in contrast to conventional semiconductor-based PDs. In this work, we compare …

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves
leveraging the combination of light-sensitive two-dimensional (2D) semiconducting …