Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx based Memristive Devices
Hafnium oxide (HfOx)‐based memristive devices have tremendous potential as nonvolatile
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …
resistive random access memory (RRAM) and in neuromorphic electronics. Despite its …
Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses
In this work, ZnSnO-based resistive switching (RS) devices were fabricated with different top
electrodes (TEs) to investigate the RS and synaptic characteristics for neuromorphic …
electrodes (TEs) to investigate the RS and synaptic characteristics for neuromorphic …
Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx …
Complementary resistive switching (CRS) is a suitable approach to minimize the sneak
leakage paths through a large resistive random access memory (RRAM) array. Here, an …
leakage paths through a large resistive random access memory (RRAM) array. Here, an …
Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device
X Chen, W Hu, Y Li, S Wu, D Bao - Applied Physics Letters, 2016 - pubs.aip.org
In this letter, the dynamic evolution of TiN/HfO 2/Pt device from bipolar resistive switching
(BRS) to complementary resistive switching (CRS) was reported. The device exhibits the …
(BRS) to complementary resistive switching (CRS) was reported. The device exhibits the …
Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
M Ismail, SU Nisa, AM Rana, T Akbar, J Lee… - Applied Physics …, 2019 - pubs.aip.org
By introducing a thin non-stoichiometric CeO 2-x switching layer between the high oxygen
affinity metal TaN top electrode and the TiO 2 layer in a TaN/CeO 2-x/TiO 2/Pt bilayer (BL) …
affinity metal TaN top electrode and the TiO 2 layer in a TaN/CeO 2-x/TiO 2/Pt bilayer (BL) …
Intrinsic anionic rearrangement by extrinsic control: Transition of RS and CRS in thermally elevated TiN/HfO 2/Pt RRAM
The sneak path problem is one of the major hindrances to the application of high-density
crossbar resistive random access memory; however, complementary resistive switching …
crossbar resistive random access memory; however, complementary resistive switching …
Influence of nano-clay platelet concentration on achieving a transition from write once read many (WORM) to complementary resistive switching (CRS) behaviour in …
SK Bhattacharjee, C Debnath, SA Hussain… - Journal of Materials …, 2024 - Springer
Resistive memory devices are a promising technology, but they face challenges like sneak
paths in crossbar arrays. Complementary resistive switching (CRS) devices offer a …
paths in crossbar arrays. Complementary resistive switching (CRS) devices offer a …
Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO 2-based resistive switching memory for …
Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device
depending on the compliance current, the sweep voltage amplitude, and the bias polarity …
depending on the compliance current, the sweep voltage amplitude, and the bias polarity …
Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
Indium-tin-oxide (ITO) is investigated as the top electrode material in HfO 2-based resistive
random access memory cells. Experimental results show that in contrast to a metal (Pt) …
random access memory cells. Experimental results show that in contrast to a metal (Pt) …
Transition between resistive switching modes in asymmetric HfO2-based structures
OO Permiakova, AE Rogozhin, AV Miakonkikh… - Microelectronic …, 2023 - Elsevier
We claim that the evolution of conductive filaments (CF) in bipolar resistive switching (BRS)
and complementary resistive switching (CRS) is similar in HfO 2-based structures with one …
and complementary resistive switching (CRS) is similar in HfO 2-based structures with one …