Progress in ultraviolet photodetectors based on II–VI group compound semiconductors
J Wang, Y Xing, F Wan, C Fu, CH Xu… - Journal of materials …, 2022 - pubs.rsc.org
Ultraviolet (UV) photodetectors (PDs) have found widespread application in various fields,
such as environmental protection, life sciences, secure communications, automated …
such as environmental protection, life sciences, secure communications, automated …
Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector
Layered transition metal dichalcogenide materials grown over a conventional 3D
semiconductor substrate have ignited a spark of interest in the electronics industry. The …
semiconductor substrate have ignited a spark of interest in the electronics industry. The …
Toward a Fast and Highly Responsive SnSe2-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor
In photodetection, the response time is mainly controlled by the device architecture and
electron/hole mobility, while the absorption coefficient and the effective separation of the …
electron/hole mobility, while the absorption coefficient and the effective separation of the …
Temperature dependence of current-and capacitance–voltage characteristics of an Au/4H-SiC Schottky diode
M Gülnahar - Superlattices and Microstructures, 2014 - Elsevier
In this study, the current–voltage (I–V) and capacitance–voltage (C–V) measurements of an
Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50–300 K …
Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50–300 K …
Defect-free ZnO nanorods for low temperature hydrogen sensor applications
Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect
ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission …
ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission …
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
The presence of crystallographic defects can induce notable effects on the mechanisms
ruling the current transport in metal/semiconductor contacts. In this context, in this Letter, the …
ruling the current transport in metal/semiconductor contacts. In this context, in this Letter, the …
Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction
To understand the different mechanism occurring at the MoS 2-silicon interface, we have
fabricated a MoS 2/Si heterojunction by exfoliating MoS 2 on top of the silicon substrate …
fabricated a MoS 2/Si heterojunction by exfoliating MoS 2 on top of the silicon substrate …
Enhanced Carrier Density in a MoS2/Si Heterojunction-Based Photodetector by Inverse Auger Process
When exploring the charge transport in the MoS 2/Si heterojunction, it is imperative to
understand the contribution of different carrier interactions and scattering mechanisms in the …
understand the contribution of different carrier interactions and scattering mechanisms in the …
Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation
The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–
V characterization at room temperature. The behavior of the metal-semiconductor (MS) …
V characterization at room temperature. The behavior of the metal-semiconductor (MS) …
[HTML][HTML] Space charge limited corrections to the power figure of merit for diamond
An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG)
semiconductors based on the on-state specific resistance ( R ON, sp) derived from the …
semiconductors based on the on-state specific resistance ( R ON, sp) derived from the …