Emerging laser-assisted vacuum processes for ultra-precision, high-yield manufacturing
Laser technology is a cutting-edge process with a unique photothermal response, precise
site selectivity, and remote controllability. Laser technology has recently emerged as a novel …
site selectivity, and remote controllability. Laser technology has recently emerged as a novel …
Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process
E Liu, J Li, N Zhou, R Chen, H Shao, J Gao, Q Zhang… - Nanomaterials, 2023 - mdpi.com
Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-
spacer cavity etching and channel release both require selective etching of Si0. 7Ge0. 3 …
spacer cavity etching and channel release both require selective etching of Si0. 7Ge0. 3 …
Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM
Z Kong, H Lin, H Wang, Y Song, J Li, X Liu… - Journal of …, 2023 - iopscience.iop.org
Abstract Fifteen periods of Si/Si 0.7 Ge 0.3 multilayers (MLs) with various SiGe thicknesses
are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition …
are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition …
Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors
H Shao, T Reiter, R Chen, J Li, Z Hu… - ACS Applied …, 2024 - ACS Publications
The loading effect hinders the precise profile control during the selective etching of SiGe in
stacked SiGe/Si layers, thereby hindering optimal gate-all-around (GAA) transistor …
stacked SiGe/Si layers, thereby hindering optimal gate-all-around (GAA) transistor …