[HTML][HTML] β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
We report the realization of field-plated vertical Ga 2 O 3 trench Schottky barrier diodes
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
[HTML][HTML] High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
In this work, β-Ga 2 O 3 fin field-effect transistors (FinFETs) with metalorganic chemical
vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga 2 O …
vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga 2 O …
[HTML][HTML] Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
(Ultra) wide-bandgap vertical power FinFETs
Y Zhang, T Palacios - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …
A solar-blind photodetector with ultrahigh rectification ratio and photoresponsivity based on the MoTe2/Ta: β-Ga2O3 pn junction
G Zeng, MR Zhang, YC Chen, XX Li, DB Chen… - Materials Today …, 2023 - Elsevier
High-performance solar-blind photodetectors have attracted increasing attention due to their
important implications in military, medical, and industrial applications. Among a large …
important implications in military, medical, and industrial applications. Among a large …
[HTML][HTML] Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3
β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous
potential for power-switching devices for next-generation high power electronics. The …
potential for power-switching devices for next-generation high power electronics. The …
Beveled Fluoride Plasma Treatment for Vertical -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
Z Hu, Y Lv, C Zhao, Q Feng, Z Feng… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this letter, we report on demonstrating a high performance vertical β-Ga 2 O 3 Schottky
barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge …
barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge …