Model-based nonlinear embedding for power-amplifier design
A fully model-based nonlinear embedding device model including low-and high-frequency
dispersion effects is implemented for the Angelov device model and successfully …
dispersion effects is implemented for the Angelov device model and successfully …
Waveform engineering at gate node of class-J power amplifiers
A Alizadeh, M Frounchi, A Medi - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, the class-J mode of operation is investigated when sinusoidal, half-sinusoidal
(HS), triangle, pulse, and reduced conduction angle voltage waveforms are shaped at the …
(HS), triangle, pulse, and reduced conduction angle voltage waveforms are shaped at the …
A novel efficiency‐enhancement topology: GaN high‐electron mobility transistors with waveform‐modulation structure composed of Schottky diodes
K Han - International Journal of Circuit Theory and Applications, 2018 - Wiley Online Library
To improve the power‐added efficiency (PAE) of the gallium nitride (GaN) high‐electron
mobility transistor (HEMT) in radio frequency applications, this paper studies the relationship …
mobility transistor (HEMT) in radio frequency applications, this paper studies the relationship …
Nonlinear embedding for high efficiency RF power amplifier design and application to generalized asymmetric Doherty amplifiers
H Jang - 2014 - rave.ohiolink.edu
A fully model-based nonlinear embedding device model including low and high-frequency
dispersion effects is implemented for the Angelov device model and successfully …
dispersion effects is implemented for the Angelov device model and successfully …
Two-stage Class FC Power Amplifier with an Optimum 2nd Harmonic Control at the Power Stage Input
X Li, P Colantonio, F Giarnnini… - 2019 PhotonIcs & …, 2019 - ieeexplore.ieee.org
This paper presents a two stage Class FC power amplifier working at S-band. It achieves
PAE larger than 60% and an output power of 36 dBm over frequency range 2.27 GHz to 2.44 …
PAE larger than 60% and an output power of 36 dBm over frequency range 2.27 GHz to 2.44 …