Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

Conductive and semiconductive oxides constitute a class of materials of which the electrical
conductivity and optical transparency can be modulated through material design (eg, doping …

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a
property palette that has been shown to span from dielectric to transparent-conducting …

TiO 2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-
dimethylamino titanium and ozone. Amorphous TiO 2 film was deposited at a low substrate …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …

During the past decade, atomic layer deposition (ALD) has become an important thin-film
deposition method in microelectronics industry, and it has also gained a lot of interest in …

The influence of the oxygen plasma parameters on the morphology and optical properties of
TiO 2 thin films has been extensively analyzed in plasma enhanced atomic layer deposition …