Nonvolatile memory
Y Fujimori, T Nakamura - US Patent 6,674,109, 2004 - Google Patents
An object of the invention is to decrease leakage current of a nonvolatile memory and to
design improvement of memory characteristic thereof. The invention is characterized by …
design improvement of memory characteristic thereof. The invention is characterized by …
Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the same
JE Heo, CM Lee, IS Kim, DH Im - US Patent App. 12/222,700, 2009 - Google Patents
BACKGROUND Description of the Related Art 0002. A ferroelectric material including
titanium and oxy gen is used in conventional ferroelectric random access memory (FRAM) …
titanium and oxy gen is used in conventional ferroelectric random access memory (FRAM) …
Ferroelectric capacitor and method for manufacturing the same
(57) ABSTRACT A ferroelectric capacitor and a method for manufacturing the same includes
a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially …
a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially …
Ferroelectric capacitor and a semiconductor device
M Kurasawa, K Maruyama - US Patent 6,841,817, 2005 - Google Patents
A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the
lower electrode and having a perovskite-type structure and an upper electrode provided …
lower electrode and having a perovskite-type structure and an upper electrode provided …
Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same
H Park, WS Lee, NK Kim, JH Chung, JH Choi - US Patent 7,482,242, 2009 - Google Patents
Example embodiments relate to a capacitor, a method of forming the same, a semiconductor
device having the capaci tor and a method of manufacturing the same. Other example …
device having the capaci tor and a method of manufacturing the same. Other example …
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
PC Van Buskirk, JF Roeder, SM Bilodeau… - US Patent …, 2006 - Google Patents
(57) ABSTRACT A novel lead zirconium titanate (PZT) material having unique properties
and application for PZT thin film capaci tors and ferroelectric capacitor Structures, eg …
and application for PZT thin film capaci tors and ferroelectric capacitor Structures, eg …
Silicon-based PT/PZT/PT sandwich structure and method for manufacturing the same
TL Ren, LT Zhang, LT Liu, ZJ Li - US Patent 6,507,060, 2003 - Google Patents
Abstract A silicon based PT/PZT/PT sandwich structure is disclosed. A dielectric layer is
formed over a semiconductor substrate. The dielectric layer preferably comprises a silicon …
formed over a semiconductor substrate. The dielectric layer preferably comprises a silicon …
Method for forming PZT thin film using seed layer
D Kim - US Patent 6,333,066, 2001 - Google Patents
A method for forming a PZT (lead zirconate titanate: Pb (Zr x Ti 1− x) O 3) thin film using a
seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO …
seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO …
Ferroelectric memory and manufacturing method thereof
K Imai, K Yamakawa - US Patent 6,586,793, 2003 - Google Patents
A ferroelectric memory includes first and second plugs respectively connected to one and
the other of source/drain regions of the transistor formed on a semiconductor wafer. A first …
the other of source/drain regions of the transistor formed on a semiconductor wafer. A first …