GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Calculation of thermal conductivity of AlGaN/GaN superlattices
A Filatova-Zalewska, Z Litwicki… - physica status solidi …, 2023 - Wiley Online Library
Herein, the results of theoretical investigation of anisotropic thermal conductivity of
AlGaN/GaN superlattices (SLs) are presented. For calculations, the Boltzmann transport …
AlGaN/GaN superlattices (SLs) are presented. For calculations, the Boltzmann transport …