Abstract" Ultra" wide-bandgap semiconductors are an emerging class of materials with
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …

The wide energy gap compound semiconductors, gallium nitride and zinc oxide, are widely
recognized as promising materials for novel electronic and optoelectronic device …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and optoelectronic device applications. As informed device design requires a firm …

Mobility and critical electric field for bulk Al x Ga 1-x N alloys across the full composition
range (0≤ x≤ 1) are analyzed to address the potential application of this material system for …

A method for the production of porous SiC-ceramics from finely dispersed starting system
SiO 2–C by means of single-stage carbothermal process involving spark plasma sintering at …

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-
bandgap transistors that have a bandgap greater than∼ 3.4 eV, beyond that of GaN and …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and opto-electronic device applications. As informed device design requires a firm …

Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic
device applications have resulted in quality improvements, such that key metrics match or …

This article investigates the radiation effects on as-deposited and annealed AlN films on 4H-
SiC substrates under gamma-rays. The AlN films are prepared using plasma-enhanced …

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an
improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault …