Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of …

Ş Altındal, AF Özdemir, Ş Aydoğan, A Türüt - Journal of Materials Science …, 2022 - Springer
Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …

A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) …

Ç Bilkan, S Zeyrek, SE San, Ş Altındal - Materials Science in Semiconductor …, 2015 - Elsevier
In this study, both the metal-semiconductor (MS) and metal-polymer-semiconductor
(MPS),(Al/C 20 H 12/p-Si), type Schottky barrier diodes (SBDs) were fabricated using spin …

Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Ö Vural, Y Şafak, Ş Altındal, A Türüt - Current Applied Physics, 2010 - Elsevier
The forward bias current–voltage (I–V) characteristics of Al/Rhodamine-101/n-GaAs
structure have been investigated in the temperature range of 80–350K. It has been seen a …

Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on …

O Özakın, M Sağlam, B Güzeldir - Journal of Materials Science: Materials …, 2022 - Springer
It is well known that in metal–semiconductor rectifier junctions with an interface layer, the
drop potential across the interface layer modifies the barrier height by changing the electric …

Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature

M Sağlam, B Güzeldir, A Türüt, D Ekinci - Journal of Electronic Materials, 2021 - Springer
In order to understand the current conduction mechanism in metal-semiconductor rectifier
junctions, it is important to take electrical measurements depending on the sample …

Defect states assisted charge conduction in Au/MoO3–x/n-Si Schottky barrier diode

S Mahato, C Voz, D Biswas, S Bhunia… - Materials Research …, 2018 - iopscience.iop.org
Role of defect states of thermally evaporated molybdenum trioxide (MoO 3− x) on electrical
conductivity was investigated via low temperature current–voltage and capacitance–voltage …

Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an …

B Güzeldir, A Baltakesmez, M Sağlam - Physica B: Condensed Matter, 2022 - Elsevier
In this study, the microstructural properties of Silicon carbide (SiC) thin film deposited by
radio frequency (RF) sputtering technique and the effects of SiC as an interlayer on the …

High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties

S Ktifa, A Khalfaoui, M Rahmani, K Aouadi - Materials Science and …, 2024 - Elsevier
The DC sputtering power (DC SP) effect on the chemical composition, structural and
electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si …

Structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diodes prepared by liquid phase epitaxy

A Ashery, AAM Farag, R Mahani - Microelectronic engineering, 2010 - Elsevier
In this paper, we have investigated the structural, electrical and magnetic characterizations
of Ni/Cu/p-Si Schottky diode prepared by liquid phase epitaxy (LPE). Current density …

Negative capacitance in Au/CuInGaSe 2/SiO 2/n-Si/Al Schottky barrier diode devices

A Ashery, AEH Gaballah… - Physical Chemistry …, 2024 - pubs.rsc.org
This study pioneers the use of CuInGaSe2, a quaternary alloy, in Schottky barrier diodes,
beyond its traditional application in solar cells, highlighting its potential in sustainable …