Radiation effects in a post-Moore world
DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …
effects on microelectronics, focusing on historical trends and future needs. A number of …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
[HTML][HTML] Radiation-hard ASICs for data transmission and clock distribution in High Energy Physics
P Moreira, S Kulis - Nuclear Instruments and Methods in Physics Research …, 2023 - Elsevier
Today's high-energy physics colliders host experiments that rely on transmission of massive
volumes of data (exceeding tens of tera bytes per second) for physics analysis. From the …
volumes of data (exceeding tens of tera bytes per second) for physics analysis. From the …
TID degradation mechanisms in 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Si FinFETs at ultrahigh doses. n-and p-FinFETs with several channel lengths are irradiated …
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
S Bonaldo, DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses
G Borghello, E Lerario, F Faccio, HD Koch… - Microelectronics …, 2021 - Elsevier
We studied the radiation response of 3 different 65 CMOS planar technologies at the ultra-
high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of …
high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of …
Total ionizing dose responses of 22-nm FDSOI and 14-nm bulk FinFET charge-trap transistors
RM Brewer, EX Zhang, M Gorchichko… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Total-ionizing-dose (TID) effects are investigated for 22-nm fully-depleted silicon-on-
insulator (FDSOI) and 14-nm bulk FinFET charge-trap memory transistors. Electron trapping …
insulator (FDSOI) and 14-nm bulk FinFET charge-trap memory transistors. Electron trapping …
Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
G Termo, G Borghello, F Faccio, S Michelis… - Nuclear Instruments and …, 2024 - Elsevier
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …
4H-SiC CMOS transimpedance amplifier of gamma-irradiation resistance over 1 MGy
M Masunaga, S Sato, R Kuwana… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A transimpedance amplifier (TIA)-with gamma-irradiation resistance of over 1 MGy-based on
a novel 4H-SiC complementary MOS (CMOS) technology was fabricated. This TIA is robust …
a novel 4H-SiC complementary MOS (CMOS) technology was fabricated. This TIA is robust …