Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon
Direct-gap photoluminescence has been observed at room temperature in Ge 1− y Sn y
alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV …
alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV …
Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys
VR D'Costa, YY Fang, J Tolle, J Kouvetakis… - Physical Review Letters, 2009 - APS
A direct absorption edge tunable between 0.8 and∼ 1.4 eV is demonstrated in strain-free
ternary Ge 1-xy Si x Sn y alloys epitaxially grown on Ge-buffered Si. This decoupling of …
ternary Ge 1-xy Si x Sn y alloys epitaxially grown on Ge-buffered Si. This decoupling of …
Direct gap electroluminescence from Si/Ge1− ySny pin heterostructure diodes
Electroluminescence spectra from Si/Ge 1− y Sn y heterostructure diodes are reported. The
observed emission is dominated by direct gap optical transitions and displays the expected …
observed emission is dominated by direct gap optical transitions and displays the expected …
High quality Ge virtual substrates on Si wafers with standard STI patterning
Further improving complementary metal oxide semiconductor performance beyond the 22
nm generation likely requires the use of high mobility channel materials, such as Ge for p …
nm generation likely requires the use of high mobility channel materials, such as Ge for p …
High-performance near-IR photodiodes: a novel chemistry-based approach to Ge and Ge–Sn devices integrated on silicon
Ge/Si heterostructure diodes based on n++ Si (100)/i-Ge/p-Ge and p++ Si (100)/i-Ge/n-Ge
stacks and intrinsic region thickness of~ 350 and~ 900 nm, respectively, were fabricated …
stacks and intrinsic region thickness of~ 350 and~ 900 nm, respectively, were fabricated …
Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content
Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge
and n-Ge 1-y Sn y films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) …
and n-Ge 1-y Sn y films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) …
Direct versus indirect optical recombination in Ge films grown on Si substrates
The optical emission spectra from Ge films on Si are markedly different from their bulk Ge
counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the …
counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the …
Nonlinear structure-composition relationships in the GeSn/Si(100) () system
R Beeler, R Roucka, AVG Chizmeshya… - Physical Review B …, 2011 - APS
The compositional dependence of the cubic lattice parameter in Ge 1− y Sn y alloys has
been revisited. Large 1000-atom supercell ab initio simulations confirm earlier theoretical …
been revisited. Large 1000-atom supercell ab initio simulations confirm earlier theoretical …
Strain-free Ge∕ GeSiSn quantum cascade lasers based on L-valley intersubband transitions
The authors propose a Ge∕ Ge 0.76 Si 0.19 Sn 0.05 quantum cascade laser using
intersubband transitions at L valleys of the conduction band which has a “clean” offset of 150 …
intersubband transitions at L valleys of the conduction band which has a “clean” offset of 150 …
E centers in ternary Si1− x− yGexSny random alloys
A Chroneos, C Jiang, RW Grimes… - Applied Physics …, 2009 - pubs.aip.org
E centers in ternary Si1−x−yGexSny random alloys | Applied Physics Letters | AIP
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