Structural properties of self-organized semiconductor nanostructures

J Stangl, V Holý, G Bauer - Reviews of modern physics, 2004 - APS
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

Ge dots and nanostructures grown epitaxially on Si

JM Baribeau, X Wu, NL Rowell… - Journal of Physics …, 2006 - iopscience.iop.org
We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

Three-dimensional Si/Ge quantum dot crystals

D Grützmacher, T Fromherz, C Dais, J Stangl… - Nano …, 2007 - ACS Publications
Modern nanotechnology offers routes to create new artificial materials, widening the
functionality of devices in physics, chemistry, and biology. Templated self-organization has …

[图书][B] Handbook of nanophysics: functional nanomaterials

KD Sattler - 2010 - taylorfrancis.com
Handbook of Nanophysics: Functional Nanomaterials illustrates the importance of tailoring
nanomaterials to achieve desired functions in applications. Each peer-reviewed chapter …

Diameter scalability of rolled-up In (Ga) As/GaAs nanotubes

C Deneke, C Müller, NY Jin-Phillipp… - Semiconductor …, 2002 - iopscience.iop.org
Free-standing nanotubes are formed by rolling-up InGaAs/GaAs bilayers on a GaAs
substrate. We present a systematic study of the tube diameter as a function of bilayer …

Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates

Z Zhong, G Bauer - Applied Physics Letters, 2004 - pubs.aip.org
We report on a combination of lithography and self-assembly techniques which results in
long-range two-dimensionally ordered Ge islands. Island lattices with perpendicular but also …

Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications

M Brehm, M Grydlik - Nanotechnology, 2017 - iopscience.iop.org
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

Self-assembled Ge/Si dots for faster field-effect transistors

OG Schmidt, K Eberl - IEEE Transactions on electron devices, 2001 - ieeexplore.ieee.org
Self-assembled and coherently strained germanium nanostructured dots are grown on
prepatterned Si substrates along ordered lines. These precisely aligned nanocrystals are …

[HTML][HTML] Thermodynamic theory of growth of nanostructures

XL Li, CX Wang, GW Yang - Progress in Materials Science, 2014 - Elsevier
Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

Z Zhong, A Halilovic, T Fromherz, F Schäffler… - Applied Physics …, 2003 - pubs.aip.org
Two-dimensional (2D) periodic arrays of Ge islands were realized on prepatterned Si (001)
substrates by solid-source molecular-beam epitaxy. Atomic-force microscopy images …