Edge-over MOSFET with poly-Si thin film channel for achieving thermodynamic limit of subthreshold...

[引用][C] Overcoming Thermodynamic Limit of Subthreshold Swing in MOSFET: Device Structure and Unconventional Source Metal

JY Lee - 2020 - Graduate School of UNIST
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[引用][C] Electrical Dipole Formation at Metal/Graphene Interface and Its Application for Junctionless CMOS Circuitry

W Song - 2023 - Ulsan National Institute of Science …
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