Electronic defects in amorphous oxide semiconductors: A review
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement
As the most common external dopant of amorphous oxide semiconductors (AOSs), the
hydrogen (H) exhibits great influences on the performance of AOS thin-film transistors (TFTs) …
hydrogen (H) exhibits great influences on the performance of AOS thin-film transistors (TFTs) …
Si-incorporated amorphous indium oxide thin-film transistors
S Aikawa, T Nabatame… - Japanese Journal of …, 2019 - iopscience.iop.org
Amorphous oxide semiconductors, especially indium oxide-based (InO x) thin films, have
been major candidates for high mobility with easy-to-use device processability. As for a …
been major candidates for high mobility with easy-to-use device processability. As for a …
Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide
The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO)
thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to …
thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to …
High-pressure H2O post-annealing for improving reliability of LTPS and a-IGZO thin-film transistors within a coplanar structure
Improving reliability of low-temperature polycrystalline silicon (LTPS) and amorphous indium-
gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs), components of low-temperature …
gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs), components of low-temperature …
Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor
Presently, the 3‐terminal artificial synapse device has been in focus for neuromorphic
computing systems owing to its excellent weight controllability. Here, an artificial synapse …
computing systems owing to its excellent weight controllability. Here, an artificial synapse …
First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing
DG Jin, HY Yu - Small, 2024 - Wiley Online Library
Electrolyte‐gated transistors have strong potential for high‐performance artificial synapses
in neuromorphic bio‐interfaces owing to their outstanding synaptic characteristics, low …
in neuromorphic bio‐interfaces owing to their outstanding synaptic characteristics, low …
Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration
E Rucavado, Q Jeangros, DF Urban, J Holovský… - Physical Review B, 2017 - APS
The link between sub-bandgap states and optoelectronic properties is investigated for
amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were …
amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were …
Investigation of the capacitance–voltage electrical characteristics of thin-film transistors caused by hydrogen diffusion under negative bias stress in a moist …
HC Chen, CW Kuo, TC Chang, WC Lai… - … applied materials & …, 2019 - ACS Publications
In this study, the impact of moisture on the electrical characteristics of an amorphous In–Ga–
Zn–O thin-film transistor (a-IGZO TFT) was investigated. In commercial applications of such …
Zn–O thin-film transistor (a-IGZO TFT) was investigated. In commercial applications of such …
Multiple roles of hydrogen treatments in amorphous in–Ga–Zn–O films
H Tang, Y Kishida, K Ide, Y Toda… - ECS Journal of Solid …, 2017 - iopscience.iop.org
The roles of hydrogen introduced by post-deposition hydrogen treatments were investigated
for amorphous In–Ga–Zn–O (a-IGZO) films using room-temperature hydrogen plasma (H …
for amorphous In–Ga–Zn–O (a-IGZO) films using room-temperature hydrogen plasma (H …