The current understanding on the diamond machining of silicon carbide

S Goel - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Abstract The Glenn Research Centre of NASA, USA (www. grc. nasa. gov/WWW/SiC/, silicon
carbide electronics) is in pursuit of realizing bulk manufacturing of silicon carbide (SiC) …

Integrated silicon carbide electro-optic modulator

K Powell, L Li, A Shams-Ansari, J Wang… - Nature …, 2022 - nature.com
Owing to its attractive optical and electronic properties, silicon carbide is an emerging
platform for integrated photonics. However an integral component of the platform is missing …

Mechanisms of tool-workpiece interaction in ultraprecision diamond turning of single-crystal SiC for curved microstructures

W Huang, J Yan - International Journal of Machine Tools and …, 2023 - Elsevier
Single-crystal silicon carbide (SiC) is one of the most attractive materials for electronics and
optics but extremely difficult to cut owing to its hard and brittle properties. While in previous …

Review of molecular dynamics/experimental study of diamond-silicon behavior in nanoscale machining

LN Abdulkadir, K Abou-El-Hossein, AI Jumare… - … International Journal of …, 2018 - Springer
Surface integrity of parts can seriously be damaged by mechanical and thermal loads during
machining leading to crack initiation, constraining of parts or damage. At present, it is very …

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Z Tian, X Chen, X Xu - International Journal of Extreme …, 2020 - iopscience.iop.org
Single crystal silicon carbide (SiC) is widely used for optoelectronics applications. Due to the
anisotropic characteristics of single crystal materials, the C face and Si face of single crystal …

Influence of microstructure on the cutting behaviour of silicon

S Goel, A Kovalchenko, A Stukowski, G Cross - Acta Materialia, 2016 - Elsevier
We use molecular dynamics simulation to study the mechanisms of plasticity during cutting
of monocrystalline and polycrystalline silicon. Three scenarios are considered:(i) cutting a …

Brittle–ductile transition during diamond turning of single crystal silicon carbide

S Goel, X Luo, P Comley, RL Reuben, A Cox - International Journal of …, 2013 - Elsevier
In this experimental study, diamond turning of single crystal 6H-SiC was performed at a
cutting speed of 1m/s on an ultra-precision diamond turning machine (Moore Nanotech 350 …

Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process

S Goel, X Luo, RL Reuben - Tribology International, 2013 - Elsevier
In this paper, a molecular dynamics simulation has been adopted to arrive at a
phenomenological understanding of the wear mechanism of diamond tools against single …

Study on strain rate and heat effect on the removal mechanism of SiC during nano-scratching process by molecular dynamics simulation

B Meng, D Yuan, S Xu - International Journal of Mechanical Sciences, 2019 - Elsevier
To study the influence of strain rate and heat effect on the removal behavior of SiC, the
dislocation nucleation/propagation, amorphization and abrasive wear behavior are …

Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations

Z Tian, X Xu, F Jiang, J Lu, Q Luo, J Lin - Ceramics International, 2019 - Elsevier
This article aimed to study the nanomechanical properties of silicon carbide under
nanoindentation and nanoscratching by the molecular dynamics (MD). First, the MD models …