Junctionless SOI FinFET with advanced spacer techniques for sub-3 nm technology nodes
VB Sreenivasulu, V Narendar - AEU-International Journal of Electronics …, 2022 - Elsevier
Silicon (Si) ultrathin junctionless (JL) n-FinFET with LG= 3 nm and 1 nm are explored for the
first time by invoking Hf x Ti 1-x O 2 based high-k gate dielectric. The 3D device performance …
first time by invoking Hf x Ti 1-x O 2 based high-k gate dielectric. The 3D device performance …
Performance improvement of spacer engineered n-type SOI FinFET at 3-nm gate length
VB Sreenivasulu, V Narendar - AEU-International Journal of Electronics …, 2021 - Elsevier
In this paper, for the first time, we have investigated the DC and analog/RF performance
metrics of 3 nm gate length (LG) silicon-on-insulator (SOI) FinFET using Hf x Ti 1− x O 2 high …
metrics of 3 nm gate length (LG) silicon-on-insulator (SOI) FinFET using Hf x Ti 1− x O 2 high …
Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance
K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
Carbon nanotube field-effect transistors (CNTFETs) and their growing applications are
becoming part of modern nanoelectronics, which is in urgent need for high-performance …
becoming part of modern nanoelectronics, which is in urgent need for high-performance …
Controlling BTBT-induced parasitic BJT action in junctionless FETs using a hybrid channel
In this brief, we demonstrate for the first time that the presence of a hybrid channel, which
consists of ap+ layer below the n+ active device layer in a junctionless (JL) FET, leads to a …
consists of ap+ layer below the n+ active device layer in a junctionless (JL) FET, leads to a …
Performance evaluation of spacer dielectric engineered vertically stacked junctionless nanosheet FET for sub-5 nm technology node
This manuscript for the first time provides insights on the impact of different spacer materials
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …
[图书][B] 3D TCAD simulation for CMOS nanoeletronic devices
YC Wu, YR Jhan - 2018 - Springer
Almost on a daily basis, nanoeletronic metal-oxide-semiconductor (CMOS) technology and
device design are introduced and explored in rapidly developing semiconductor industry …
device design are introduced and explored in rapidly developing semiconductor industry …
Impact of channel thickness on the performance of GaAs and GaSb DG-JLMOSFETs: an atomistic tight binding based evaluation
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …
One dimensional transport in silicon nanowire junction-less field effect transistors
Junction-less nanowire transistors are being investigated to solve short channel effects in
future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction …
future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction …
Symmetric operation in an extended back gate JLFET for scaling to the 5-nm regime considering quantum confinement effects
In this paper, we propose a double gate junctionless FET (DGJLFET) with an extended back
gate (EBG) architecture for significantly improved performance in the sub-10-nm regime …
gate (EBG) architecture for significantly improved performance in the sub-10-nm regime …
[图书][B] Layout techniques for MOSFETs
SP Gimenez - 2016 - books.google.com
This book aims at describing in detail the different layout techniques for remarkably boosting
the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide …
the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide …