Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers
T Kimura, T Konno, H Fujikura - Applied Physics Letters, 2021 - pubs.aip.org
The presence of large amounts of electron traps together with residual carbon, as well as
their trade-off relationship, is an obstacle to fabricating next-generation GaN-based power …
their trade-off relationship, is an obstacle to fabricating next-generation GaN-based power …
Room temperature GaN-based edge-emitting spin-polarized light emitting diode
Room temperature circularly polarized electroluminescence is observed from bulk GaN-
based double-heterostructure edge-emitting light emitting diodes operated with continuous …
based double-heterostructure edge-emitting light emitting diodes operated with continuous …
Electrical spin injection using GaCrN in a GaN based spin light emitting diode
D Banerjee, R Adari, S Sankaranarayan… - Applied Physics …, 2013 - pubs.aip.org
We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor
(DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane …
(DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane …
Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method
Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in
nanostructured form. Especially, nanoparticles show ferromagnetic properties at room …
nanostructured form. Especially, nanoparticles show ferromagnetic properties at room …
Influence of oxygen precursors and annealing on Fe3O4 films grown on GaN templates by metal organic chemical vapor deposition
S Huang, S Gu, K Tang, J Ye, Z Xu, S Zhu… - Journal of Vacuum …, 2014 - pubs.aip.org
O 2 and N 2 O, popular oxygen precursors for oxide films growth, have been employed to
grow Fe 3 O 4 films on GaN templates via metal organic chemical vapor deposition …
grow Fe 3 O 4 films on GaN templates via metal organic chemical vapor deposition …
Discovering a Cr-Induced Novel Superstructure on Top of a GaN Pseudo “1× 1” Surface by Scanning Tunneling Microscopy Using a Fe/W Tip
Y Zou, D Tang, X Wang, F Wang, B Cheng… - Crystal Growth & …, 2021 - ACS Publications
Two-dimensional (2D) islands are induced by molecular beam epitaxy of sub-monolayer
transition metal Cr on top of GaN pseudo “1× 1” surface. By scanning tunneling microscopy …
transition metal Cr on top of GaN pseudo “1× 1” surface. By scanning tunneling microscopy …
Hole-induced d0 ferromagnetism enhanced by Na-doping in GaN
Y Zhang, F Li - Journal of Magnetism and Magnetic Materials, 2017 - Elsevier
The d 0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is
found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga …
found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga …
Properties of III-Nitride-Based Polariton and Spin Polariton Diode Lasers
A Bhattacharya - 2018 - deepblue.lib.umich.edu
The cavity electrodynamic regime of strong coupling of emitter-photon interactions in a
semiconductor microcavity gives rise to new light-matter entangled quasiparticles, also …
semiconductor microcavity gives rise to new light-matter entangled quasiparticles, also …
Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires
D Banerjee, MB Nadar, P Upadhyay, R Singla… - arXiv preprint arXiv …, 2015 - arxiv.org
We demonstrate a novel method for nanowire formation by natural selection during wet
chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of …
chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of …