Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

Phase‐change random access memory is anticipated to break the bottleneck of the “storage
wall” due to its advantages in simultaneous data storage and in‐memory computing …

Phase change materials, with more than one reflectance and resistance states, have been a
subject of interest in the fields of phase change memories and nanophotonics. Although …

Chalcogenides possess interesting optical properties, which are attractive for a variety of
applications such as data storage, neuromorphic computing, and photonic switches. Lately a …

Oxygen-doped germanium telluride phase change materials are proposed for high
temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an …

In order to optimize materials for phase change random access memories (PCRAM), the
effect of Ge doping on Ga-Sb alloy crystallization was studied using combined in situ …

Abstract Superlattice-like Ge 50 Te 50/Ge 8 Sb 92 (SLL GT/GS) thin film was systematically
investigated for multi-level storage and ultra-fast switching phase-change memory …

Ge2Sb2Te4Se (I) and Ge2Sb2Te2Se3 (II) thin films were synthesized and compared to the
pure telluride Ge2Sb2Te5. In situ X-ray diffraction (XRD) and in situ transmission electron …

In this work, we investigated the structural and conductivity stability of Ga–Sb thin films for
phase change memory (PCM). The mass density and thickness change are significant for …

Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next
generation of embedded phase change memories because of their good thermal stability …