Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis… - Advanced Electronic …, 2018 - Wiley Online Library
Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance
MA Khan, N Maeda, J Yun, M Jo, Y Yamada… - Scientific reports, 2022 - nature.com
Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN)
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
High‐quality epitaxy consisting of Al1− xGaxN/Al1− yGayN multiple quantum wells (MQWs)
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
with sharp interfaces and emitting at≈ 280 nm is successfully grown on sapphire with a …
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
Combination of sputter deposition and high-temperature annealing is a promising technique
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template
AlGaN films were grown on face-to-face annealed sputter-deposited AlN/sapphire (FFA Sp-
AlN) templates via metalorganic vapor phase epitaxy (MOVPE), and the growth behavior of …
AlN) templates via metalorganic vapor phase epitaxy (MOVPE), and the growth behavior of …
External quantum efficiency of 6.5% at 300 nm emission and 4.7% at 310 nm emission on bare wafer of AlGaN-based UVB LEDs
MA Khan, Y Itokazu, N Maeda, M Jo… - ACS Applied …, 2020 - ACS Publications
As per the Minamata Convention on Mercury, regulation on mercury use will be stricter from
the year of 2020, and safe AlGaN-based ultraviolet (UV) light sources are urgently needed …
the year of 2020, and safe AlGaN-based ultraviolet (UV) light sources are urgently needed …
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
AlN on sapphire with dislocation density of 10 7 cm− 2 was prepared by double sputtering
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
Thermal cycle annealing (TCA) is introduced to accelerate the dislocation annihilation in
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …
sputter-deposited AlN films on sapphire. Compared with constant temperature annealing …